SSG55N60Z

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG55N60 series 55 AMP /600 Volts 1.65 V saturation ultrafast IGBT Features: • • • • • Lowest ON-resistance in the industry Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available DESIGNER’S DATA SHEET TO-254 and TO-254Z TO-258 and TO-259 Maximum Ratings Collector – Emitter Breakdown Voltage Gate – Emitter Voltage Max. Continuous Collector Current Max. Instantaneous Drain Current (Tj limited) Clamped Inductive Load current Repetitive Reverse Voltage Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254 (M) TO-254Z (Z) TO-258 (N) Symbol VCES VGE @ TC = 25ºC @ TC = 100ºC @ TC = 25ºC L= 10 uH Limited by Tj max @ TC = 25ºC ID1 ID2 ID3 ILM EARV PD TOP & TSTG R0JC Value 600 ±20 55 27 200 200 20 195 -55 to +150 0.64 (typ 0.35) TO-259 (P) Units V V A A A mJ W ºC ºC/W PIN 3 PIN 2 PIN 3 PIN 2 PIN 1 PIN 1 PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 PIN 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TG0005A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG50N60 series Symbol VGE = 0V, IC = 250µA VGE = 0V, IC = 1 A VGE = 15V, IC = 27A, Tj= 25oC VGE = 15V, IC = 55A, Tj= 25oC VGE = 15V, IC = 27A, Tj= 150oC VCE = VGE, IC = 0.25 mA VGE = ±20V VCE = 600V, VGE = 0V, Tj = 25oC VCE = 10V, VGE = 0V, Tj = 25oC VCE = 600V, VGE = 0V, Tj = 150oC VCE = 15V, IC = 27A, Tj = 25oC VGE = 15V VCC = 400V IC = 27A VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 25oC VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 25oC VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 150oC BVCES BVECS VCE(on) VGS(th) IGES ICES gfs Qg Q ge Q gc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres Electrical Characteristics 4/ Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Min 600 18 –– –– –– 3.0 –– –– –– –– 15 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ Max –– –– 1.65 2.0 1.6 –– –– 0.5 –– –– 25 180 25 60 35 20 175 90 0.12 0.55 0.66 33 25 230 120 1.6 4000 250 55 –– –– 2.0 –– –– 6.0 ±100 250 2 5000 –– 275 40 90 –– –– 260 130 –– –– 0.9 –– –– 260 130 –– –– –– –– Units V V V V nA µA µA µA Mho nC Collector to Emitter Saturation Voltage Gate Threshold Voltage Gate to Emitter Leakage Zero Gate Voltage Collector Current Forward Transconductance Total Turn-on Gate Charge Gate to Emitter Turn-on Charge Gate to Collector Turn-on Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Turn-On Switching Losses Turn-Off Switching Losses Total Switching Losses Turn on Delay Time Rise Time Turn off Delay Time Fall Time Total Switching Losses Input Capacitance Output Capacitance Reverse Transfer Capacitance nsec mJ ns ns ns ns mJ pF VGE = 0V VCC = 30V f = 1 MHz NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: SSG55N60M SSG55N60Z SSG55N60N SSG55N60P PIN ASSIGNMENT (Standard) Package Drain Source Pin 1 Pin 2 TO-254 (M) Pin 1 Pin 2 TO-254Z (Z) Pin 1 Pin 2 TO-258 (N) Pin 1 Pin 2 TO-259 (P) Gate Pin 3 Pin 3 Pin 3 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TG0005A DOC