SSR04C60CT

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series 4A / 600V Schottky Silicon Carbide Centertap Rectifier Features: • • • • • • World's First Hermetic SiC Centertap Rectifier High Voltage, 600V Very High Operating Temperature, 250ºC No Recovery Time (tfr or trr) High Current Operation, 4A Hermetically Sealed Packaging • TX, TXV, S Level screening available DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SSR04C 60 CT S.5 TX │ │ │ └ Screening __ = Not Screened │││ TV = TX Level │││ TXV= TXV Level │││ S = S Level │││ │ │ └ Package 2/ S.5 = SMD.5 ││ /39 = Low Profile TO-39 ││ │ └ Configuration CT = Centertap │ └ Voltage 50 = 500 V 60 = 600 V Maximum Ratings Symbol Value Units Peak Repetitive and Peak Surge Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave) Non Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO, per leg) Power Dissipation Operating & Storage Temperature 4/ Maximum Thermal Resistance Junction to Case TO-39 (/39) SSR04C50 SSR04C60 Per Leg Total VRRM VRSM Io IFSM PD Top & Tstg 500 600 2 4 4 1.3 5 -55 to +250 175 45 Volts Amps Amps Watts ºC ºC/W Free Air, TA = 25ºC Heatsunk, TC = 25ºC Junction to Ambient Junction to Case SMD .5 (S.5) RθJC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0022B DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series Electrical Characteristic (Per Leg) Symbol Min Typ Max Units Instantaneous Forward Voltage Drop (If = 2A, Tj = 25ºC, 300 – 500 µsec pulse) Instantaneous Forward Voltage Drop (If = 2A, Tj = 150ºC, 300 – 500 µsec pulse) Instantaneous Forward Voltage Drop (If = 2A, Tj = -55ºC, 300 – 500 µsec pulse) Reverse Leakage Current (Vr = Rated Vr, Tj = 25ºC, 300 µsec min pulse) Reverse Leakage Current (Vr = Rated Vr, Tj = 150ºC, 300 µsec min pulse) Junction Capacitance (Vr=10 Vdc, Tc=25ºC, f=1MHz) Total Capacitive Charge Vf1 Vf2 Vf3 Ir1 Ir2 Cj Qc –– –– –– –– –– –– –– 1.80 2.35 1.90 100 400 45 5 1.94 2.60 2.10 200 1000 –– –– Volts Volts Volts µA µA pF nC (VR = 400V, IF = 5A, di/dt = 200A/µs, TJ = 150ºC) NOTES: 1/ 2/ 3/ 4/ For Ordering Information, Price, and Availability Contact Factory. For Package Outlines Contact Factory. All Electrical Characteristics @25oC Unless Otherwise Specified. For Soldering Consideration Consult Factory, if High Temperature Operation is Desired. PIN ASSIGNMENT Pin 1 Pin 2 Cathode Anode Anode Anode Available Part Numbers: SSR04C50CTS.5 SSR04C60CTS.5 SSR04C50CT/39 SSR04C60CT/39 Package SMD .5 (S.5) TO-39 (/39) Pin 3 Anode Cathode