RC10S08G

SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC10S01G THRU RC10S10G SILICON GPP CELL RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces Ideal for hybrids TECHNICAL SPECIFICATION MECHANICAL DATA • Polarity: Bottom or upper electrode denotes cathode according to the notice in package Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS SYMBOL VRRM Maximum Repetitive Peak Reverse Voltage VRMS Maximum RMS Voltage VDC Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IF(AV) (Note 2) (Ta=55oC) Peak Forward Surge Current (8.3ms single IFSM half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage VF (at rated forward current) Maximum DC Reverse Current Ta=25oC IR (at rated DC blocking voltage) Ta=150oC CJ Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 3) Rθ(ja) Storage and Operation Junction Temperature TSTG,TJ Note: 1. Measured at 1 MHz and applied voltage of 4.0Vdc 2. When mounted to heat sink from body. 3. Thermal resistance from junction to ambient. RC10S RC10S RC10S RC10S RC10S RC10S UNITS 01G 02G 04G 06G 08G 10G 100 200 400 600 800 1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V 10 400 1.0 10 300 300 1 -50 to +150 A A V µA µA pF o C/W o C http://www.sse-diode.com