RC30S08G

SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01G THRU RC30S10G SILICON GPP CELL RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces • Ideal for hybrids TECHNICAL SPECIFICATION MECHANICAL DATA • Polarity: Bottom or upper electrode denotes cathode according to the notice in package Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (Ta=55oC) (Note 2) Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage (at rated forward current) Maximum DC Reverse Current Ta=25oC (at rated DC blocking voltage) Ta=150 C o SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR RC30S RC30S RC30S RC30S RC30S RC30S UNITS 01G 02G 04G 06G 08G 10G 100 200 400 600 800 1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V 30 400 1.00 10 750 300 1 -50 to +150 o A A V µA µA pF C/W o C CJ Typical Junction Capacitance (Note 1) Rθ(ja) Typical Thermal Resistance (Note 3) Storage and Operation Junction Temperature TSTG,TJ Note: 1. Measured at 1 MHz and applied voltage of 4.0Vdc 2. When mounted to heat sink from body. 3. Thermal resistance from junction to ambient. http://www.sse-diode.com