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RS1DB

RS1DB

  • 厂商:

    SSE

  • 封装:

  • 描述:

    RS1DB - SURFACE MOUNT FAST SWITCHING RECTIFIER - Shanghai Sunrise Electronics

  • 数据手册
  • 价格&库存
RS1DB 数据手册
SHANGHAI SUNRISE ELECTRONICS CO., LTD. RS1AB THRU RS1MB SURFACE MOUNT FAST SWITCHING RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES • Ideal for surface mount pick and place application • Low profile package • Built-in strain relief • High surge capability • Glass passivated chip • Fast recovery for high efficiency • High temperature soldering guaranteed: 260oC/10sec/at terminal TECHNICAL SPECIFICATION SMB/DO-214AA B A C D F G A MAX. .155(3.94) MIN. .130(3.30) E MAX. .220(5.59) MIN. .205(5.21) B .180(4.57) .160(4.06) F .096(2.44) .084(2.13) H C D .083(2.11) .012(0.305) .077(1.96) .006(0.152) G H .008(0.203) .060(1.52) .004(0.102) .030(0.76) MECHANICAL DATA • Terminal: Plated leads solderable per MIL-STD 202E, method 208C • Case: Molded with UL-94 Class V-O recognized flame retardant epoxy • Polarity: Color band denotes cathode Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (TL=110oC) SYMBOL VRRM VRMS VDC IF(AV) RS1 RS1 RS1 RS1 RS1 RS1 RS1 UNITS AB BB DB GB JB KB MB 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 1.0 A A V µA µA nS pF o Peak Forward Surge Current (8.3ms single IFSM 30 half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage VF 1.3 (at rated forward current) 5.0 Maximum DC Reverse Current Ta=25oC IR o 200 (at rated DC blocking voltage) Ta=125 C 150 Maximum Reverse Recovery Time (Note 1) trr 250 15 CJ Typical Junction Capacitance (Note 2) 30 Typical Thermal Resistance (Note 3) Rθ(ja) -50 to +150 TSTG,TJ Storage and Operation Junction Temperature Note: 1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A. 2.Measured at 1.0 MHz and applied voltage of 4.0Vdc 3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area 500 C/W o C http://www.sse-diode.com