US1J

SHANGHAI SUNRISE ELECTRONICS CO., LTD. US1A THRU US1M SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES • Ideal for surface mount pick and place application • Low profile package • Built-in strain relief • High surge capability • Glass passivated chip • Ultra fast recovery for high efficiency • High temperature soldering guaranteed: 260oC/10sec/at terminal TECHNICAL SPECIFICATION SMA/DO-214AC B A C D F G A MAX. .110(2.79) MIN. .100(2.54) E MAX. .208(5.28) MIN. .194(4.93) B .177(4.50) .157(3.99) F .090(2.29) .078(1.98) H C D .058(1.47) .012(0.305) .052(1.32) .006(0.152) G H .008(0.203) .060(1.52) .004(0.102) .030(0.76) MECHANICAL DATA • Terminal: Plated leads solderable per MIL-STD 202E, method 208C • Case: Molded with UL-94 Class V-O recognized flame retardant epoxy • Polarity: Color band denotes cathode Dimensions in inches and (illimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS SYMBOL VRRM Maximum Repetitive Peak Reverse Voltage VRMS Maximum RMS Voltage VDC Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IF(AV) 1.0 (TL=100oC) Peak Forward Surge Current (8.3ms single IFSM 30 half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage VF 1.0 1.4 (at rated forward current) 5.0 Maximum DC Reverse Current Ta=25oC IR o 200 (at rated DC blocking voltage) Ta=100 C 50 Maximum Reverse Recovery Time (Note 1) trr 20 CJ Typical Junction Capacitance (Note 2) 32 Rθ(ja) Typical Thermal Resistance (Note 3) -50 to +150 TSTG,TJ Storage and Operation Junction Temperature Note: 1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A. 2.Measured at 1.0 MHz and applied voltage of 4.0Vdc 3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area US 1A 50 35 50 US 1B 100 70 100 US 1D 200 140 200 US 1G 400 280 400 US 1J 600 420 600 US US UNITS 1K 1M 800 1000 V 560 700 V 800 1000 V A A 1.7 V µA µA nS pF o 75 10 C/W o C http://www.sse-diode.com