US3B

SHANGHAI SUNRISE ELECTRONICS CO., LTD. US3A THRU US3M SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A FEATURES • Ideal for surface mount pick and place application • Low profile package • Built-in strain relief • High surge capability • Glass passivated chip • Ultra fast recovery for high efficiency • High temperature soldering guaranteed: 260oC/10sec/at terminal TECHNICAL SPECIFICATION SMC/DO-214AB B A C D F G A MAX. .245(6.22) MIN. .220(5.59) E MAX. .320(8.13) MIN. .305(7.75) B .280(7.11) .260(6.60) F .096(2.44) .084(2.13) H C D .124(3.15) .012(0.305) .108(2.75) .006(0.152) G H .008(0.203) .060(1.52) .004(0.102) .030(0.76) MECHANICAL DATA • Terminal: Plated leads solderable per MIL-STD 202E, method 208C • Case: Molded with UL-94 Class V-O recognized flame retardant epoxy • Polarity: Color band denotes cathode Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS SYMBOL VRRM Maximum Repetitive Peak Reverse Voltage VRMS Maximum RMS Voltage VDC Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IF(AV) 3.0 (TL=75oC) Peak Forward Surge Current (8.3ms single IFSM 100 half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage VF 1.0 1.4 (at rated forward current) 10.0 Maximum DC Reverse Current Ta=25oC IR o 500 (at rated DC blocking voltage) Ta=100 C 50 Maximum Reverse Recovery Time (Note 1) trr 45 CJ Typical Junction Capacitance (Note 2) 25 Rθ(ja) Typical Thermal Resistance (Note 3) -50 to +150 TSTG,TJ Storage and Operation Junction Temperature Note: 1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A. 2.Measured at 1.0 MHz and applied voltage of 4.0Vdc 3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area US 3A 50 35 50 US 3B 100 70 100 US 3D 200 140 200 US 3G 400 280 400 US 3J 600 420 600 US US UNITS 3K 3M 800 1000 V 560 700 V 800 1000 V A A 1.7 V µA µA nS pF o 75 C/W o C http://www.sse-diode.com