SDR4150

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR6638, SDR6642, SDR6643, & SDR4150 SERIES 300 mA 50 - 125 VOLTS 4.5 - 6.0 nsec HYPER FAST RECOVERY RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/ SDR____ __ __ │ │ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level (for SM, use –S) │ └ Package Type __ = Axial Leaded SM = Surface Mount Round Tab (MELF) SMS = Surface Mount Square Tab FEATURES: • • • • • • Hyper Fast Reverse Recovery Time 4.5 - 6 ns Max Hermetically Sealed Planar Passivated Chip For High Efficiency Applications Available in Axial, Subminiature Round Tab & Subminiature Square Tab Versions 2/ TX, TXV, and S-Level Screening Available Replacement for 1N6638, 1N6642, 1N6643, & 1N4150-1 Metallurgical Class 3 Bond Device Type ( VRWM ) 6638 = 125 V 6642 = 75 V 6643 = 50 V 4150 = 75 V • • MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TC = 25°C) SYMBOL SDR6638 SDR6642 SDR6643 SDR4150 VALUE 125 75 50 75 300 2.5 -65 to +175 100 325 UNIT Volts VRWM VR IO IFSM TOP and TSTG RθJE RθJL mAmps Amps °C °C/W Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TC = 25°C) Operating & Storage Temperature Thermal Resistance SM and SMS- Junction to End Tab Axial- Junction to Lead @ .375” NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Axial Leaded SM SMS NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0126B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3/ SDR6638, SDR6642, SDR6643, & SDR4150 SERIES ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage Drop (Pulsed, TA = 25°C) @ IF = 10mA CHARACTERISTICS SDR6638 SDR6642 SDR6643 SDR4150 SDR6638 @ IF = 200mA SDR6642 @ IF = 100mA SDR6643 @ IF = 100mA SDR4150 @ IF = 100mA IF = 100mA, TA = -55°C SDR6638 SDR6642 SDR6643 SDR4150 SDR6638 @ VR = 20V SDR6642 @ VR = 20V SDR6643 @ VR = 20V SDR4150 @ VR = 50V SDR6638 @ VR = 100V SDR6642 @ VR = 75V SDR6643 @ VR = 50V SDR6638 @ VR = 20V SDR6642 @ VR = 20V SDR6643 @ VR = 20V SDR4150 @ VR = 50V SDR6638 @ VR = 100V SDR6642 @ VR = 75V SDR6643 @ VR = 50V SDR6638 SDR6642 SDR6643 SDR4150 SDR6638 SDR6642 SDR6643 SDR6638 SDR6642 SDR6643 SDR4150 SM DIMENSIONS MAX .080” .180” 1.50” .022” DIM A B C MIN .056” .130” .010” MAX .064” .146” .022” SYMBOL VF1 LIMIT 0.8 0.8 1.0 0.74 1.1 1.2 1.2 0.92 1.3 125 100 75 75 35 25 50 100 500 500 500 50 50 75 100 100 100 160 2.5 5.0 5.0 2.5 2.0 2.8 2.8 4.5 5.0 6.0 4.0 SMS DIMENSIONS UNIT Vdc VF2 VF3 BVR Vdc Vdc Vdc Maximum Instantaneous Forward Voltage Drop (Pulsed) Minimum Breakdown Voltage Ir = 100 μA Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 25°C) Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 25°C) Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 150°C) Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 150°C) Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 0V Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 1.5V Maximum Reverse Recovery Time (IF = IR = 10 mA, IRR = 1 mA) AXIAL DIMENSIONS DIM A B C D MIN .056” .130” 1.00” .018” IR1 nA IR2 nA IR3 μA IR4 μA CJ1 pf CJ2 pf trr nsec DIM A B C D MIN .070” .180” .022” .001” MAX .085” .210” .028” --- NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0126B DOC