SST11LP11-QVCE

4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 SST11LP114.9-5.8 GHz High-Linearity Power Amplifier Preliminary Specifications FEATURES: • Gain: – ~24 dB gain across the 4.9-5.8 GHz band • High linear output power: – ~25 dBm P1dB – EVM~4% at 18 dBm over 4.9-5.8 GHz for 64 QAM/54 Mbps operation – ACPR below IEEE 802.11a Mask up to 21 dBm across full band • Low idle current – ~80 mA ICQ • Low shut-down current (< 1 µA) • 20 dB dynamic range on-chip differential linear power detection • Simple RF matching circuits • Packages available – 16-contact VQFN (3mm x 3mm) – Non-Pb (lead-free) packages available APPLICATIONS: • • • • WLAN (IEEE 802.11a) Japan WLAN HyperLAN2 Multimedia PRODUCT DESCRIPTION The SST11LP11 is a high-performance power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP11 is designed to operate over the entire WLAN 802.11a band between 4.9-5.8 GHz frequency band for the U.S., European, and Japanese markets while achieving highly-linear power and low EVM. The SST11LP11 power amplifier IC features easy boardlevel usage along with on-chip linear power detection and power-down control. These features coupled with low current draw at maximum linear power make the SST11LP11 ideal for battery-powered 802.11a WLAN transmitter applications. The SST11LP11 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. © 2005 SST Communications Corp. S71284-00-000 1/05 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications FUNCTIONAL BLOCKS FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 VCC3 14 16 NC RFIN RFIN VCCb 1 2 3 4 5 VREF1 15 13 12 NC 11 RFOUT 10 RFOUT Bias Circuit 6 VREF2 7 VREF3 8 Det_ref NC 9 Det 1284 B1.1 ©2005 SST Communications Corp. S71284-00-000 1/05 2 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications PIN ASSIGNMENTS VCC1 VCC2 VCC3 14 16 NC RFIN RFIN VCCb 1 2 3 4 15 NC 13 12 NC 11 RFOUT 10 RFOUT 9 Det 8 Det_ref 1284 16-vqfn P1.1 Top View (contacts facing down) RF and DC GND 0 5 VREF1 6 VREF2 7 VREF3 FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT VQFN PIN DESCRIPTIONS TABLE 1: PIN DESCRIPTION Symbol GND NC RFIN RFIN VCCb VREF1 VREF2 VREF3 Det_ref Det RFOUT RFOUT NC NC VCC3 VCC2 VCC1 Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 No Connection No Connection Power Supply Power Supply Power Supply PWR PWR PWR Power Supply Pin Name Ground No Connection I I PWR PWR PWR PWR O O O O Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Unconnected pins. RF input, DC decoupled RF input, DC decoupled Supply voltage for bias circuit 1st stage idle current control 2nd stage idle current control 3rd stage idle current control On-chip power detector reference On-chip power detector RF output RF output Unconnected pins. Unconnected pins. Power supply, 3rd stage Power supply, 2nd stage Power supply, 1st stage T1.0 1284 1. I=Input, O=Output © 2005 SST Communications Corp. 3 S71284-00-000 1/05 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 2 through 11 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage to pins 4, 14, 15, 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . “with-Pb” units1: 240°C for 3 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . “non-Pb” units: 260°C for 3 seconds 1. Certain “with-Pb” package types are capable of 260°C for 3 seconds; please consult the factory for the latest information. OPERATING RANGE Range Industrial Ambient Temp -40°C to +85°C VCC 3.3V TABLE 2: DC ELECTRICAL CHARACTERISTICS Symbol VCC ICC Det Det_ref ICQ IOFF VREG1,2,3 Parameter Supply Voltage at pins 4, 14, 15, 16 Supply Current @ POUT=21 dBm VCC=3.3V Power detector output voltage Power detector output reference Idle current Shut down current Reference Voltages for typical applications 2.90 0.6 0.6 80