SST12LP00-QV6F

2.4-2.5 GHz Power Amplifier SST12LP00 SST12LP002.4 GHz Power Amplifier Preliminary Specifications FEATURES: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB • High power-added efficiency/low operating current for Bluetooth applications – ~50% PAE or 115 mA total current consumption @ Pout = 23 dBm for Vcc = 3.3V and GCTL = 3.0V • Low idle current – ~10 mA ICQ • Simple input/output matching • Packages available – 6-contact VQFN and UQFN (3 x 1.6mm2) APPLICATIONS: • Bluetooth • USB Dongles • 2.4 GHz Cordless phones PRODUCT DESCRIPTION The SST12LP00 is a high-power and high-gain power amplifier based on the highly reliable InGaP/GaAs HBT technology. SST12LP00 is easily configured for high-power and high-efficiency applications while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 30 dB gain with better than 50% power added efficiency @ Pout = 23 dBm. The SST12LP00’s excellent linearity is well suited for Class 1 Bluetooth operation. The power amplifier IC also features easy board-level usage along with high speed power up/down control. A low reference current makes SST12LP00 ideal for the final stage power amplification in battery-powered Bluetooth, USB Dongle, or cordless phone transmitter applications. The SST12LP00 is offered in both 6-contact VQFN and UQFN packages. See Figure 2 for pin assignments and Table 1 for pin descriptions. © 2006 SST Communications Corp. S71283-01-000 3/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications FUNCTIONAL BLOCKS Bias/Gain Control GCTL PDC VCC1 RFIN 1283 B1.1 RFOUT/VCC2 VCCb FIGURE 1: Functional Block Diagram PIN ASSIGNMENTS Top View (contacts facing down) RFOUT/VCC2 GCTL PDC 1 2 3 RFIN RF and DC GND 0 6 5 4 VCC1 VCCb 1283 6-vqfn-uqfn P1.1 FIGURE 2: Pin Assignments for 6-contact VQFN and UQFN PIN DESCRIPTIONS TABLE 1: Pin Description Symbol GND GCTL PDC RFIN VCCb VCC1 RFOUT/VCC2 Pin No. 0 1 2 3 4 5 6 Power Supply Power Supply I PWR PWR O/PWR Pin Name Ground Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Power Amplifier Gain Control Power-down Control RF input, DC decoupled Vcc power supply, bias circuit Vcc power supply, 1st stage Vcc power supply, 2nd stage T1.1 1283 1. I=Input, O=Output ©2006 SST Communications Corp. S71283-01-000 3/06 2 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figure 3 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 4, 5, and 6 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V Power-down Control Voltage (PDC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC Gain Control Voltage (GCTL). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC Radio Frequency Input Power (RFIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10 dBm Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds Operating Range Range Industrial Ambient Temp -40°C to +85°C VCC 3.3V TABLE 2: DC Electrical Characteristics Symbol VCC ICC GCTL IGCTL PDC ICQ Parameter Supply Voltage at pins 4, 5, and 6 Supply Current @ POUT = 23 dBm Power Amplifier Gain Control Voltage Current through GCTL pin Logic High Voltage Logic Low Voltage Idle Current (GCTL = 3.0V) 10 2.6 0.8 0.1 Min. 2.7 Typ 3.3 115 3.0 55 3.3 100 Max. 3.6 Unit V mA V µA V V mA T2.3 1283 Test Conditions TABLE 3: AC Electrical Characteristics Symbol FL-U POUT G GVAR Parameter Frequency range Output power @ PIN = -7 dBm, VCC = 3.3V, GCTL = 3.0V Small signal gain Gain variation over band (2400~2485 MHz) 23 27 0.2 0.5 dBm dB dB T3.2 1283 Min. 2402 Typ Max. 2480 Unit MHz ©2006 SST Communications Corp. S71283-01-000 3/06 3 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS 0 -5 -10 -15 -20 -25 -30 1.0 0 -10 -20 S11 (dB) S12 (dB) -30 -40 -50 -60 -70 -80 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) 40 30 20 0 -5 -10 S21 (dB) 0 -10 -20 -30 -40 1.0 S22 (dB) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 -15 -20 -25 -30 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) 1283 Sparm1.0 FIGURE 3: S-parameters for SST12LP00 ©2006 SST Communications Corp. S71283-01-000 3/06 4 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications 32 31 30 Power Gain (dB) 29 28 27 26 25 24 23 22 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz Output Power (dBm) 1283 F3.1 FIGURE 4: Power Gain versus Output Power 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 -18 -17 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz Output Power (dBm) -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 Input Power (dBm) 1283 F4.1 FIGURE 5: Output Power versus Input Power ©2006 SST Communications Corp. S71283-01-000 3/06 5 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz Supply Current (mA) Output Power (dBm) 1283 F5.1 FIGURE 6: Supply Current versus Output Power 58 54 50 46 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz PAE (%) 42 38 34 30 26 22 18 14 10 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F6.1 FIGURE 7: PAE versus Output Power ©2006 SST Communications Corp. S71283-01-000 3/06 6 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 2nd Harmonic (dBc) Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz Output Power (dBm) 1283 F7.1 FIGURE 8: 2nd Harmonic versus Output Power -30 -34 -38 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz 3rd Harmonic (dBc) -42 -46 -50 -54 -58 -62 -66 -70 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F8.1 FIGURE 9: 3rd Harmonic versus Output Power ©2006 SST Communications Corp. S71283-01-000 3/06 7 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications -30 -34 -38 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz 4th Harmonic (d Bc) -42 -46 -50 -54 -58 -62 -66 -70 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F9.1 FIGURE 10: 4th Harmonic versus Output Power -30 -34 -38 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz 5th Harmonic (dBc) -42 -46 -50 -54 -58 -62 -66 -70 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F10.1 FIGURE 11: 5th Harmonic versus Output Power ©2006 SST Communications Corp. S71283-01-000 3/06 8 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications -10 -12 -14 -16 -18 -20 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz IMD3 (dBc) -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F11.1 FIGURE 12: IMD3 versus Output Power ©2006 SST Communications Corp. S71283-01-000 3/06 9 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications TYPICAL APPLICATION 50 Ω / 200 mil2 1 pF 22 pF4 RFOUT 2.7 nH3 GCTL PDC 1 2 3 22 pF1 RFIN 3.0 nH1 GND 6 5 4 1.8 pF 0.1 µF 3.3 nH VCC 10 µF 1283 Schematic.1.1 1. Optional and only necessary for achieving high input return loss. 2. Replaceable by 1 nH (0402) inductor for compactness. 3. Shunt capacitor can be added to the inductor to lower the 2nd harmonic. 4. LC low-pass filter can be added to lower the 2nd harmonic. FIGURE 13: Typical Application Schematic (Top View) ©2006 SST Communications Corp. S71283-01-000 3/06 10 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications PRODUCT ORDERING INFORMATION SST12LP SST12 L P 00 XX - QV6 - XX X E X Environmental Attribute E1 = non-Pb contact (lead) finish F2 = non-Pb/non-Sn contact (lead) finish Package Modifier 6 = 6 contact Package Type QV = VQFN QU = UQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. 2. Environmental suffix “F” denotes non-Pb/non-SN solder. SST non-Pb/non-Sn solder devices are “RoHS Compliant”. Valid combinations for SST12LP00 SST12LP00-QV6E SST12LP00 Evaluation Kits SST12LP00-QV6E-K SST12LP00-QU6F-K SST12LP00-QU6F Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2006 SST Communications Corp. S71283-01-000 3/06 11 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications PACKAGING DIAGRAMS TOP VIEW SIDE VIEW 0.2 BOTTOM VIEW 0.475 1 See paddle details Pin #1 1.60 ± 0.10 0.5 BSC 3.00 ± 0.10 1.00 0.80 0.076 0.05 Max 0.3 0.4 0.25 Exposed Paddle Detail 0.25 0.425 See note 2 Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min). 1.25 0.425 0.25 1.80 1mm 6-vqfn-3x1.6-QV6-0.0 FIGURE 14: 6-contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QV6 ©2006 SST Communications Corp. S71283-01-000 3/06 12 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications TOP VIEW SIDE VIEW 0.15 BOTTOM VIEW 0.475 1 See paddle details Pin #1 1.60 ± 0.10 0.5 BSC 3.00 ± 0.10 0.60 0.50 0.075 0.05 Max 0.3 0.4 0.25 Exposed Paddle Detail 0.25 0.425 See note 2 Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min). 1.25 0.425 0.25 1.80 1mm 6-uqfn-3x1.6-QU6-1.0 FIGURE 15: 6-contact Ultra-thin Quad Flat No-lead (UQFN) SST Package Code: QU6 TABLE 4: Revision History Revision 00 01 Description Date Jan 2005 Mar 2006 • • • • • • • • • • S71283: SST conversion of data sheet GP1200 Made various changes to include UQFN package Updated Information in “Features:” on page 1 Updated “Product Description” on page 1 Updated Table 1 on page 2 Updated “Electrical Specifications” on page 3 Updated Table 2 on page 3 Updated Table 3 on page 3 Updated Figure 13 on page 10 Applied new formatting styles. ©2006 SST Communications Corp. S71283-01-000 3/06 13 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Sales Manager 4F-2, No. 24, Lane 123, Sec.6, Min Chuan E. Rd Taipei 114, Taiwan, R.O.C. Tel: +886-22795-6877 Ext. 163 Fax: +886-9792-1241 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com EUROPE Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Jun Kamata Sales Director 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: jkamata@sst.com Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 www.SuperFlash.com or www.sst.com ©2006 SST Communications Corp. S71283-01-000 3/06 14