SST39SF512-90-4C-U3

512 Kbit / 1 Mbit (x8) Multi-Purpose Flash SST39SF512 / SST39SF010 SST39SF512 / 0105.0V 512Kb / 1Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 64K x8 / 128K x8 • Single 5.0V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 20 mA (typical) – Standby Current: 10 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 70 ns – 90 ns • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 7 ms (typical) – Chip-Erase Time: 15 ms (typical) – Byte-Program Time: 20 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39SF512 3 seconds (typical) for SST39SF010 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • TTL I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32-pin PLCC – 32-pin TSOP (8mm x 14mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST39SF512/010 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF512/010 devices write (Program or Erase) with a 5.0V-only power supply. The SST39SF512/010 device conforms to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39SF512/010 devices provide a maximum Byte-Program time of 30 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39SF512/010 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during erase and program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST39SF512/010 are offered in 32-pin PLCC packages, 32-pin TSOP and a 600 mil, 32-pin PDIP is also available. , See Figures 1, 2, and 3 for pinouts. Device Operation Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# © 2001 Silicon Storage Technology, Inc. S71149-03-000 4/01 394 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 512 Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Chip-Erase Operation The SST39SF512/010 provide Chip-Erase operation, which allows the user to erase the entire memory array to the “1s” state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a sixbyte Software Data Protection command sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 10 for timing diagram, and Figure 18 for the flowchart. Any commands written during the Chip-Erase operation will be ignored. Read The Read operation of the SST39SF512/010 is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 4). Byte-Program Operation The SST39SF512/010 are programmed on a byte-by-byte basis. The Program operation consists of three steps. The first step is the three-byte-load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed, within 30 µs. See Figures 5 and 6 for WE# and CE# controlled Program operation timing diagrams and Figure 15 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored. Write Operation Status Detection The SST39SF512/010 provide two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which initiates the program or erase cycle. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. Sector-Erase Operation The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The SectorErase operation is initiated by executing a six-byte-command load sequence for Software Data Protection with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The sector address is latched on the falling edge of the sixth WE# pulse, while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The end of Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 9 for timing waveforms. Any commands written during the SectorErase operation will be ignored. Data# Polling (DQ7) When the SST39SF512/010 are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. The device is then ready for the next operation. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program Operation. For sector or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 7 for Data# Polling timing diagram and Figure 16 for a flowchart. ©2001 Silicon Storage Technology, Inc. S71149-03-000 4/01 394 2 512 Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 0s and 1s, i.e., toggling between 0 and 1. The Toggle Bit will begin with “1”. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector or Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 8 for Toggle Bit timing diagram and Figure 16 for a flowchart. Product Identification The product identification mode identifies the device as the SST39SF512 and SST39SF010 and manufacturer as SST. This mode may be accessed by software operations. Users may use the software product identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Table 3 for hardware operation or Table 4 for software operation, Figure 11 for the software ID entry and read timing diagram and Figure 17 for the ID entry command sequence flowchart. TABLE 1: PRODUCT IDENTIFICATION Address Manufacturer’s ID Device ID SST39LF/VF512 0001H 0001H B4H B5H T1.1 394 Data Protection The SST39SF512/010 provide both hardware and software features to protect nonvolatile data from inadvertent writes. Data BFH 0000H Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a Write cycle. VDD Power Up/Down Detection: The write operation is inhibited when VDD is less than 2.5V. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. SST39LF/VF010 Product Identification Mode Exit/Reset In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to the Read operation. Please note that the software reset command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 12 for timing waveform and Figure 17 for a flowchart. Software Data Protection (SDP) The SST39SF512/010 provide the JEDEC approved Software Data Protection scheme for all data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three byte sequence. The three byte-load sequence is used to initiate the Program operation, providing optimal protection from inadvertent write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six byte load sequence. The SST39SF512 device is shipped with the Software Data Protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to read mode, within TRC. ©2001 Silicon Storage Technology, Inc. S71149-03-000 4/01 394 3 512 Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet FUNCTIONAL BLOCK DIAGRAM X-Decoder SuperFlash Memory Memory Address Address Buffers & Latches Y-Decoder CE# OE# WE# DQ7 - DQ0 394 ILL B1.1 Control Logic I/O Buffers and Data Latches SST39SF512 SST39SF010 WE# WE# VDD A12 A15 A16 NC VDD A12 A15 NC NC SST39SF010 SST39SF512 NC SST39SF512 SST39SF010 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 SST39SF010 SST39SF512 5 6 7 8 9 10 11 12 13 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 32-pin PLCC Top View 21 14 15 16 17 18 19 20 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 394 ILL F02b.4 DQ1 DQ2 DQ3 DQ4 DQ5 FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN PLCC ©2001 Silicon Storage Technology, Inc. DQ6 VSS S71149-03-000 4/01 394 4 512 Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet SST39SF010 SST39SF512 A11 A9 A8 A13 A14 NC WE# VDD NC A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC WE# VDD NC NC A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 SST39SF512 SST39SF010 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 Standard Pinout Top View Die Up 394 ILL F01.2 FIGURE 2: PIN ASSIGNMENTS FOR 32-PIN TSOP (8MM X 14MM) SST39SF010 SST39SF512 SST39SF512 SST39SF010 NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS NC NC A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 32-pin 6 PDIP 7 8 Top View 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD WE# NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VDD WE# NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 394 ILL F02a.3 FIGURE 3: PIN ASSIGNMENTS FOR 32-PIN PDIP ©2001 Silicon Storage Technology, Inc. S71149-03-000 4/01 394 5 512 Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet TABLE 2: PIN DESCRIPTION Symbol AMS1-A0 DQ7-DQ0 Pin Name Address Inputs Data Input/output Functions To provide memory addresses. During Sector-Erase AMS-A12 address lines will select the sector. To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the Write operations. To provide 5.0V supply (±10%) Unconnected pins. T2.3 394 CE# OE# WE# VDD VSS NC Chip Enable Output Enable Write Enable Power Supply Ground No Connection 1. AMS = Most significant address AMS = A15 for SST39SF512 and A16 for SST39SF010 TABLE 3: OPERATION MODES SELECTION Mode Read Program Erase Standby Write Inhibit Product Identification Software Mode VIL VIL VIH See Table 4 T3.4 394 CE# VIL VIL VIL VIH X X OE# VIL VIH VIH X VIL X WE# VIH VIL VIL X X VIH DQ DOUT DIN X1 High Z High Z/ DOUT High Z/ DOUT Address AIN AIN Sector address, XXH for Chip-Erase X X X 1. X can be VIL or VIH, but no other value. ©2001 Silicon Storage Technology, Inc. S71149-03-000 4/01 394 6 512 Kbit / 1 Mbit Multi-Purpose Flash SST39SF512 / SST39SF010 Data Sheet TABLE 4: SOFTWARE COMMAND SEQUENCE Command Sequence Byte-Program Sector-Erase Chip-Erase Software ID Entry4,5 Software ID Exit6 Software ID Exit6 1st Bus Write Cycle Addr1 5555H 5555H 5555H 5555H XXH 5555H Data AAH AAH AAH AAH F0H AAH 2AAAH 55H 5555H F0H T4.3 394 2nd Bus Write Cycle Addr1 2AAAH 2AAAH 2AAAH 2AAAH Data 55H 55H 55H 55H 3rd Bus Write Cycle Addr1 5555H 5555H 5555H 5555H Data A0H 80H 80H 90H 4th Bus Write Cycle Addr1 BA2 5555H 5555H Data Data AAH AAH 5th Bus Write Cycle Addr1 2AAAH 2AAAH Data 55H 55H 6th Bus Write Cycle Addr1 SAX3 5555H Data 30H 10H 1. Address format A14-A0 (Hex), Address A15 can be VIL or VIH, but no other value, for the Command sequence for SST39SF512. Addresses A15 - A16 can be VIL or VIH, but no other value, for the Command sequence for SST39SF010. 2. BA = Program Byte address 3. SAX for Sector-Erase; uses AMS-A12 address lines AMS = Most significant address AMS = A15 for SST39SF512 and A16 for SST39SF010 4. The device does not remain in Software Product ID Mode if powered down. 5. With AMS-A1 =0; SST Manufacturer’s ID= BFH, is read with A0 = 0, SST39LF/VF512 Device ID = B4H, is read with A0 = 1 SST39LF/VF010 Device ID = B5H, is read with A0 = 1 6. Both Software ID Exit operations are equivalent Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V Transient Voltage (