SGA-1263

Preliminary Product Description Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2 GHz and is fabricated using the latest SiGe HBT 50 GHz FT process, featuring 1 micron emitters with Vceo > 7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125ºC operating range (-40C to +85C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM and narrowband PCS bands. Isolation vs. Frequency 0 -2 0 SGA-1263 DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features • DC-4000 MHz Operation • Single Supply Voltage • Excellent Isolation, >50 dB at 900 MHz • 50 Ohms In/Out, Broadband Match for Operation from DC-4 GHz • Unconditionally Stable Applications • Buffer Amplifier for Oscillator Applications • Broadband Gain Blocks • IF Amp Units f = 850 MHz f = 1950 MHz f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 4000 MHz f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 4000 MHz f = DC - 2400 MHz f = 2400 - 4000 MHz f = DC - 2400 MHz f = 2400 - 4000 MHz f = 850 MHz f = 1950 MHz f = DC - 1000 MHz f = 1000 - 2400 MHz f = 1000 MHz dB m dB m dB dB dB dB dB dB dB m dB m dB dB pS V 2.5 14.3 Min. Typ. -7.8 -7.4 15.9 15.2 12.3 56.3 40.6 30.8 1.8:1 1.3:1 1.8:1 1.9:1 2.6 2.8 2.7 2.9 82 2.8 3.1 Max. dB -4 0 -6 0 -8 0 100 500 900 1900 2400 3500 6000 Frequency MHz Parameters: Test Conditions: Z0 = 50 Ohms, Id = 8 mA, T = 25ºC Output Power at 1dB Compression Symbol P 1dB S 21 Small Signal Gain S 12 Reverse Isolation S11 S 22 IP3 NF TD VD Input VSWR Output VSWR Third Order Intercept Point Power out per Tone = -20 dBm Noise Figure Group Delay Device Voltage The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100935 Rev A Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier Specification Parameter Bandw idth Frequency Range Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min DC 2.8 8 16.0 2.7 4.0 -6.9 8.5 61.6 15.7 2.7 2.6 -7.8 8.9 48.4 14.7 3.0 2.8 -7.4 8.8 35.6 14.2 2.8 0.2 -7.0 8.4 33.6 Typ. Max. 4000 Unit T= 25C MHz T= 25C V mA T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB Test Condition The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100935 Rev A 2 Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier Pin # 1 Function D escription GND C onnecti on to ground. Use vi a holes for best performance to reduce lead i nductance as close to ground leads as possi ble. GND Sames as Pi n 1 RF IN RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. V cc Supply C onnecti on. Thi s pi n should be bypassed wi th a sui table capaci tor(s). GND Sames as Pi n 1 RF OUT RF output and bi as pi n. D C voltage i s present on thi s pi n, therefore a D C blocki ng capaci tor i s necessary for proper operati on. D evice Schematic 2 3 4 5 6 Application Schematic for +5V Operation at 900 MHz Note: A bias resistor is needed for stability over temperature 1uF 68pF 270 ohms VCC=+5V 50 ohm microstrip 50 ohm microstrip 4 3 100pF 6 1,2,5 100pF Application Schematic for +5V Operation at 1900 MHz 270 ohms VCC=+5V 50 ohm microstrip 1uF 22pF 4 6 3 68pF 50 ohm microstrip 1,2,5 68pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100935 Rev A 3 Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier S21, Id =10mA, T=+25C 24 18 0 -2 0 S12, Id =10mA, T=+25C dB 12 6 0 100 500 900 1900 2400 3500 6000 dB -4 0 -6 0 -8 0 100 500 900 1900 2400 3500 6000 6000 Frequency MHz Frequency MHz S11, Id =10mA, T=+25C 0 -1 0 S22, Id =10mA, T=+25C 0 -1 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 6000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 Frequency MHz Frequency MHz S11, Id=10mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=10mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100935 Rev A 4 Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier S21, Id =10mA, T=-40C 24 18 0 -2 0 S12, Id =10mA, T=-40C dB 1 2 6 0 100 500 900 1900 2400 3500 6000 dB -4 0 -6 0 -8 0 100 500 900 1900 2400 3500 6000 Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Frequency MHz Frequency MHz S11, Id =10mA, T=-40C 0 -1 0 S22, Id =10mA, T=-40C 0 -1 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 6000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 6000 Frequency MHz Frequency MHz S11, Id=10mA, T=-40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=10mA, T=-40C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100935 Rev A 5 Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier S21, Id =10mA, T=+85C 24 18 0 -2 0 S12, Id =10mA, T=+85C dB 12 6 0 100 500 900 1900 2400 3500 6000 dB -4 0 -6 0 -8 0 100 500 900 1900 2400 3500 6000 6000 Frequency MHz Frequency MHz S11, Id =10mA, T=+85C 0 -1 0 S22, Id =10mA, T=+85C 0 -1 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 6000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 Frequency MHz Frequency MHz S11, Id=10mA, T=+85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=10mA, T=+85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100935 Rev A 6 Preliminary Preliminary SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier Absolute Maximum Ratings Parameter Supply C urrent Operati ng Temperature Maxi mum Input Power Storage Temperature Range Operati ng Juncti on Temperature Value 20 -40 to +85 -12 -40 to +85 +125 U nit mA C dB m C C Part Number Ordering Information Part Number SGA-1263-TR1 Reel Siz e 7" Devices/Reel 3000 Recommended Bias Resistor Values Supply 3.6V Voltage(Vs) Rbias (Ohms) 100 5V 275 7.5V 588 9V 775 12V 1150 Caution: Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Thermal Resistance (Lead-Junction): 255° C/W 65 4 Pin Designation 1 GND GND RF in V cc GND RF out 2 3 4 5 Note: Pin 1 is on lower left when you can read package marking Package Marking A12 1 2 3 6 Package Dimensions 1.30 (0.051) REF. Pad Layout 0.026 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 0.30 REF. 0.30 (0.012) 0.10 (0.0040 0.016 0.425 (0.017) TYP. 0.20 (0.0080 0.10 (0.004) 10° The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100935 Rev A 7