SGA-5386

Preliminary Product Description Stanford Microdevices’ SGA-5386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-5386 requires only DC blocking and bypass capacitors for external components. SGA-5386 DC-3200 MHz Silicon Germanium HBT Cascadeable Gain Block Small Signal Gain vs. Frequency 20 15 Product Features • DC-3200 MHz Operation • Single Voltage Supply • High Output Intercept: +31dBm typ. at 850 MHz • Low Current Draw: 60mA at 3.6V typ. • Low Noise Figure: 3.5dB typ. at 850 MHz Applications • Oscillator Amplifiers • PA for Low Power Applications • IF/ RF Buffer Amplifier • Drivers for CATV Amplifiers U nits f = 850 MHz f = 1950 MHz f = D C -1000 MHz f = 1000-2000 MHz f = 2000-5000 MHz f = D C -1000 MHz f = 1000-2000 MHz f = 2000-5000 MHz f = D C -5000 MHz f = D C -5000 MHz f = 850 MHz f = 1950 MHz f = D C -1000 MHz f = 1000-2400 MHz f = 1000 MHz dB m dB m dB dB dB dB dB dB dB m dB m dB dB pS V mA 3.1 15.0 Min. Typ. 17.0 14.7 17.2 16.6 15.5 20.8 21.2 21.2 1.25:1 1.25:1 31.0 29.0 3.5 4.0 112.0 3.6 60.0 4.1 Max. dB 10 5 0 100 500 900 1900 2400 3500 5000 Frequency MHz Electrical Specifications at Ta = 25C Symbol P 1dB Parameters: Test C onditions: Z0 = 50 Ohms, f = D C -3200MH z Output Power at 1dB C ompressi on S 21 Small Si gnal Gai n S 12 VSWR VSWR IP3 NF TD VD ID Reverse Isolati on Input VSWR Output VSWR Thi rd Order Intercept Poi nt Noi se Fi gure Group D elay D evi ce Voltage D evi ce C urrent The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100611 Rev. A Preliminary Preliminary SGA-5386 DC-3200 MHz 3.5V SiGe Amplifier Specification Parameter Bandw idth Frequency Range Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min DC 3.6 60.0 17.2 3.4 32.0 17.0 19.6 20.8 16.6 3.5 32.0 17.0 16.9 21.1 14.9 4.0 29.0 14.7 18.0 21.3 14.0 4.1 27.0 13.6 15.8 21.2 Typ. Max. 3200 Unit T= 25C MHz T= 25C V mA T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB Test Condition The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user ’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100611 Rev. A Preliminary Preliminary SGA-5386 DC-3200 MHz 3.5V SiGe Amplifier Pin # 1 Function Description RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. GND Sames as Pin 2 Device Schematic 2 3 4 Application Schematic for +5V Operation at 900 MHz 1uF 68pF 25 ohms VCC =+5V 33nH 50 ohm microstrip 2 1 3 100pF 4 100pF 50 ohm microstrip Application Schematic for +5V Operation at 1900 MHz 1uF 22pF 25 ohms VCC=+5V 22nH 50 ohm microstrip 2 1 3 50 ohm microstrip 68pF 4 68pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user ’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100611 Rev. A Preliminary Preliminary SGA-5386 DC-3200 MHz 3.5V SiGe Amplifier S21, Id =60mA, T=+25C 20 15 0 -10 S12, Id =60mA, T=+25C dB 10 5 0 100 500 900 1900 2400 3500 5000 dB -20 -30 -40 100 500 900 1900 2400 3500 5000 5000 Frequency MHz Frequency MHz S11, Id =60mA, T=+25C 0 -1 0 0 -10 S22, Id =60mA, T=+25C dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 dB -20 -30 -40 100 500 900 1900 2400 3500 Frequency MHz Frequency MHz S11, Id=60mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 3.2 GHz S22, Id=60mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 3.2 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user ’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100611 Rev. A Preliminary Preliminary SGA-5386 DC-3200 MHz 3.5V SiGe Amplifier S21, Id =60mA, T=-40C 20 15 0 -10 S12, Id =60mA, T=-40C dB 10 5 0 100 500 900 1900 2400 3500 5000 dB -20 -30 -40 100 500 900 1900 2400 3500 5000 5000 Frequency MHz Frequency MHz S11, Id =60mA, T=-40C 0 -1 0 0 -10 S22, Id =60mA, T=-40C dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 dB -20 -30 -40 100 500 900 1900 2400 3500 Frequency MHz Frequency MHz S11, Id=60mA, Ta= -40C Freq. Min = 0.1 GHz Freq. Max = 3.2 GHz S22, Id=60mA, Ta= -40C Freq. Min = 0.1 GHz Freq. Max = 3.2 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user ’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100611 Rev. A Preliminary Preliminary SGA-5386 DC-3200 MHz 3.5V SiGe Amplifier S21, Id =60mA, T=85C 16 12 0 -10 S12, Id =60mA, T=85C dB 8 4 0 100 500 900 1900 2400 3500 5000 dB -20 -30 -40 100 500 900 1900 2400 3500 5000 Freq. Min = 0.1 GHz Freq. Max = 3.2 GHz Frequency MHz Frequency MHz S11, Id =60mA, T=85C 0 -10 0 -10 S22, Id =60mA, T=85C dB -20 -30 -40 100 500 900 1900 2400 3500 5000 dB -20 -30 -40 100 500 900 1900 2400 3500 5000 Frequency MHz Frequency MHz S11, Id=60mA, Ta= 85C Freq. Min = 0.1 GHz Freq. Max = 3.2 GHz S22, Id=60mA, Ta= 85C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user ’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100611 Rev. A Preliminary Preliminary SGA-5386 DC-3200 MHz 3.5V SiGe Amplifier Absolute Maximum Ratings Parameter Supply C urrent Operati ng Temperature Maxi mum Input Power Storage Temperature Range Operati ng Juncti on Temperature Value 120 -40 to +85 +10 -40 to +85 +150 U nit mA C dB m C C Part Number Ordering Information Part Number SGA-5386-TR1 SGA-5386-TR2 Reel Siz e 7" 13" Devices/Reel 1000 3000 Caution: Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 4V 8 5V 25 7.5V 67 9V 92 12V 142 Thermal Resistance (Lead-Junction): 97° C/W Package Dimensions For 7.5V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. Pin Designation 1 2 3 4 RF in GND RF out and Bias GND PCB Pad Layout The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user ’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100611 Rev. A