SGA-6386

Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the SGA-6386 typically provides +36 dBm output IP3, 15.4 dB of gain, and +21 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25°C 18 16 GAIN SGA-6386 DC-3000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features • High Gain : 13.3 dB at 1950 MHz • Cascadable 50 Ohm • Patented SiGe Technology 0 Return Loss (dB) -8 ORL IRL Gain (dB) 14 12 10 8 0 -16 -24 -32 -40 1 2 3 Frequency (GHz) 4 5 • Operates From Single Supply • Low Thermal Resistance Package Applications • Cellular, PCS, CDPD • Wireless Data, SONET • Satellite Units dB dB dB dBm dBm dBm dBm M Hz dB dB dB V °C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.6 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 14.0 Ty p. 15.4 13.3 12.5 21.0 19.0 36.0 34.0 3000 26.7 16.2 4.4 4.9 97 5.4 Max. 16.9 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point (Pow er out per tone = 0dBm) Bandw idth Determined by Return Loss (