SNA-276-TR2

Product Description Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Also available in chip form (SNA-200), its small size (0.33mm x 0.33mm) and gold metallization, make it an ideal choice for use in hybrid circuits. The SNA-276 is available in tape and reel at 1000, 3000 and 5000 devices per reel. SNA-276 DC-6.5 GHz, Cascadable GaAs MMIC Amplifier Output Power vs. Frequency 16 15 Product Features • Cascadable 50 Ohm Gain Block • 16dB Gain, +14dBm P1dB • 1.5:1 Input and Output VSWR • Operates From Single Supply • Low Cost Stripline Mount Ceramic Package • Hermetically Sealed 50 Ohm Gain Blocks Applications • Narrow and Broadband Linear Amplifiers • Commercial and Industrial Applications dBm 14 13 12 0.5 1 1.5 2 4 6 8 10 GHz Electrical Specifications at Ta = 25° C S ym bol P a r a m e te r s : T e s t C o n d it io n s : Id = 5 0 m A , Z 0 = 5 0 O h m s S m a ll S ig n a l P o w e r G a in f = 0 .1 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 4 .0 -6 .5 G H z f = 0 .1 -4 .0 G H z U n its dB dB dB dB GHz f = 2 .0 G H z f = 2 .0 G H z f = 0 .1 -6 .5 G H z f = 2 .0 G H z f = 2 .0 G H z f = 0 .1 -6 .5 G H z dBm dB M in . 1 5 .0 1 4 .0 1 3 .0 Ty p . 1 6 .0 1 5 .0 1 4 .0 + /1 .0 6 .5 1 4 .0 5 .5 1 .5 :1 2 7 .0 100 20 3 .5 4 .0 -0 .0 0 1 8 -4 .0 4 .5 6 .0 M ax. G P G F G a in F la tn e s s 3 d B B a n d w id th O u tp u t P o w e r a t 1 d B C o m p re s s io n N o is e F ig u r e In p u t/O u tp u t T h ir d O r d e r I n t e r c e p t P o i n t G ro u p D e la y BW 3dB P 1dB NF VSW R IP T 3 dBm psec dB V D IS O L V D R e v e r s e Is o l a t i o n D e v ic e V o lta g e D e v i c e G a i n T e m p e r a tu r e C o e ff i c i e n t D e v i c e V o l t a g e Te m p e r a t u r e C o e f fi c i e n t d G /d T d V /d T d B /d e g C m V /d e g C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-25 SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier |S11| vs. Frequency 0 -5 -10 18 17 16 |S21| vs. Frequency dB -15 -20 -25 -30 0.1 0.5 1 1.5 2 3 4 6 dB 15 14 13 12 0.1 0.5 1 1.5 2 4 6 GHz GHz |S12| vs. Frequency 0 -5 -10 0 -5 |S22| vs. Frequency dB -15 -20 -25 0.1 0.5 1 1.5 2 4 6 8 10 dB -10 -15 -20 0.1 0.5 1 1.5 2 4 6 8 10 GHz GHz 50 Ohm Gain Blocks Noise Figure vs. Frequency 8 7.5 27 28 TOIP vs. Frequency 7 dB 6.5 6 5.5 5 0.1 0.5 1 1.5 2 4 6 8 10 dBm 26 25 24 0.1 0.5 1 1.5 2 4 6 8 10 GHz GHz Typical S-Parameters Vds = 4.0V, Ids = 50mA F re q G H z .1 0 0 .2 5 0 .5 0 0 1 .0 0 1 .5 0 2 .0 0 4 .0 0 6 .0 0 8 .0 0 1 0 .0 0 |S 11 | 0 .11 4 0 .1 4 5 0 .1 5 2 0 .1 7 1 0 .1 8 2 0 .1 7 0 0 .0 8 7 0 .1 3 0 0 .2 0 8 0 .3 9 1 S 11 A n g 157 135 11 4 57 1 -5 0 38 -7 6 -1 3 2 -1 4 9 |S 2 1 | 6 .8 8 5 6 .7 8 5 6 .6 5 9 6 .4 6 7 6 .2 5 9 6 .1 0 3 5 .1 3 0 4 .1 0 7 3 .6 8 8 2 .9 6 2 S21 Ang 166 142 139 101 60 22 -1 3 2 81 -7 2 11 8 |S 1 2 | 0 .0 8 2 0 .0 9 8 0 .1 0 6 0 .1 0 6 0 .1 0 6 0 .1 0 8 0 .11 4 0 .111 0 .1 0 8 0 .0 8 1 S12 Ang -7 -1 4 -2 8 -5 3 -8 3 -1 0 9 132 12 -11 9 99 |S 2 2 | 0 .0 8 3 0 .0 9 5 0 .11 7 0 .1 4 1 0 .1 6 6 0 .1 7 3 0 .1 4 6 0 .2 6 0 0 .1 0 3 0 .3 4 6 S22 Ang 145 126 11 5 62 5 -4 6 73 -1 0 8 -2 2 177 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-26 SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier Absolute Maximum Ratings P a r a m ete r A b s o lu te M a xim u m Part Number Ordering Information Part Number Devices Per Reel Reel Size SNA-276-TR1 SNA-276-TR2 1000 3000 5000 7" 13" 13" D e vic e C urre nt Po w e r D issipa tion R F In p ut Po w er Ju n ction Te m p e ra ture O p e ra tin g Te m p e ra tu re Sto ra g e Te m pe ra tu re 70mA 3 2 0m W 1 0 0m W +2 0 0 C -4 5 C to +8 5 C -6 5 C to +1 5 0 C R e c o m m e n d e d B ia s R e s is to r Va lu e s SNA-276-TR3 Suppl y Volta g e(Vs) R bias (O hm s) 5V 20 7.5V 70 9V 100 12V 160 15V 220 20V 320 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. MTTF vs. Temperature @ Id = 50mA Lead Temperature Junction Temperature +155C MTTF (hrs) +45C 1000000 +80C +190C 100000 +110C +220C 10000 50 Ohm Gain Blocks Thermal Resistance (Lead-Junction): 556° C/W Typical Biasing Configuration Pin Designation 1 2 3 4 RF in GND RF out and Bias GND Typical Performance at 25° C Power Gain vs. Device Current 17 16 5 4.5 60mA 50mA Device Voltage vs. Id dB 15 14 13 12 0.2 0.5 1.0 1.25 1.5 1.75 Vd 4 3.5 3 40mA 30mA 25mA 2.0 25 30 40 50 60 70 80 GHz mA 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-27