PS3G07S

PS3G07S Features Package φ3 type, Water clear epoxy Through-hole Phototransistor/φ3 Type Product features ・Photo Current : 5.0mA TYP. (VCE=5V,Ee=10mW/cm2) ・ Flat Lens ・Lead–free soldering compatible ・RoHS compliant Peak Sensitivity Wavelength Half Intensity Angle Die materials Rank grouping parameter Soldering methods 880nm 150 deg. Si Sorted by photo current per rank taping TTW (Through The Wave) soldering and manual soldering ※Please refer to Soldering Conditions about soldering. ESD Packing 2kV (HBM) Bulk : 200pcs(MIN.) Recommended Applications Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications 2009.3.23 Page 1 PS3G07S Through-hole Phototransistor/φ3 Type Absolute Maximum Ratings Item Collector Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Operating Temperature Storage Temperature Symbol Absolute Maximum Ratings (Ta=25℃) Unit mW V V mA ℃ ℃ Pc VCEO VECO Ic Topr Tstg 75 30 5 30 -30～ +85 -30～ +100 Electro-Optical Characteristics Item Symbol Characteristics Min. Photo Current VCE =5V, Ee=10mW/cm2 ※1 (Ta=25℃) Conditions Unit mA mA mA 1.5 5 27 Ic TYP. Max. Response Time VCE =10V, Ic=2mA, RL=100Ω VCEO=10V VCE=5V Ic=0.5mA, Ee=10mW/cm2 - tr/tf TYP. 5/5 μs Dark Current Peak Sensitivity Wavelength Collector-Emitter Saturation Voltage Spatial Half Width ICEO λp V C E ( SA T) ⊿θ Max. TYP. TYP. TYP. 0.2 880 0.1 150 μA nm V deg. ※ 1 Color temperature is 2,856K. Employs a standard tungsten lamp. 2009.3.23 Page 2 PS3G07S Through-hole Phototransistor/φ3 Type Photo Current Rank Ic(mA) R ank MIN. A B C D E 1.5 2.6 4.5 7.8 13.5 MAX . 3.0 5.2 9.0 15.6 27.0 V CE = 5V E e = 10mW/cm 2 (Ta=25℃) Condition ※Please contact our sales staff concerning rank designation. 2009.3.23 Page 3 PS3G07S Through-hole Phototransistor/φ3 Type Technical Data Wavelength vs. Relative Sensitivity Condition : Ta = 25℃, Vce = 0V Spatial Distribution Example Condition : Ta = 25℃ Relative Sensitivity (%) Wavelength [nm] Relative Photo Current (%) Irradiance vs. Relative Photo Current Condition : Ta = 25℃, Vce = 5V Collector-Emitter Voltage vs. Photo Current Condition : Ta = 25℃ Relative Photo Current Ic Irradiance Ee(mW/cm2) It is based on Ee=1mW/cm2. Employs a standard tungsten lamp of 2,856K. Photo Current Ic (mA) Collector-Emitter Voltage VCE(V) Employs a standard tungsten lamp of 2,856K. 2009.3.23 Page 4 PS3G07S Through-hole Phototransistor/φ3 Type Technical Data Response Time Measuring Circuit Ambient Temperature vs. Relative Photo Current Condition : VCE=10V, Ic=2mA, Ta=25℃ tr -- -- -- -- -- -tf Response Time (μs) Load Resistance : RL(Ω) Ambient Temperature vs. Collector Dissipation Ambient Temperature vs. Dark Current Condition : VCEO = 10V Collector Dissipation : Pc(mW) Ambient Temperature : Ta(℃) Dark Current : ICEO(μA) Ambient Temperature : Ta(℃) 2009.3.23 Page 5 PS3G07S Through-hole Phototransistor/φ3 Type Technical Data Ambient Temperature vs. Relative Photo Current Condition : VCE = 5V Relative Photo Current Ambient Temperature : Ta(℃) 2009.3.23 Page 6 PS3G07S Through-hole Phototransistor/φ3 Type Package Dimensions (Unit: mm) 2009.3.23 Page 7 PS3G07S Through-hole Phototransistor/φ3 Type TTW (Through The Wave) soldering Conditions Pre-heating Solder Bath Temp. Dipping Time Position 100 ℃ 265 ℃ 5s (MAX.) Resin surface temperature (MAX.) (MAX.) At least 3.0 mm away from the root of lead 1) The dip soldering process shall be twice maximum. 2) The product shall be cooled to normal temperature before the second dipping process. ※The detail is described to LED and Photodetector handling precautions of home page: "Mounting through-hole Type Devices“ and "Soldering", and use it after the confirmation, please. Manual Soldering Conditions Iron tip temp. Soldering time and frequency Position 400 ℃ 3s 1 time (MAX.) (30 W Max.) (MAX.) (MAX.) At least 3.0 mm away from the root of lead ※The detail is described to LED and Photodetector handling precautions of home page: "Mounting through-hole Type Devices“ and "Soldering", and use it after the confirmation, please. 2009.3.23 Page 8 PS3G07S Through-hole Phototransistor/φ3 Type Reliability Testing Result Reliability Testing Result Room Temp. Operating Life Resistance to Soldering Heat Temperature Cycling Wet High Temp. Storage Life High Temp. Storage Life Low Temp. Storage Life Lead Tension Vibration, Variable Frequency Applicable Standard EIAJ ED4701/100(101) EIAJ ED4701/300(302) EIAJ ED4701/100(105) EIAJ ED4701/100(103) EIAJ ED4701/200(201) EIAJ ED4701/200(202) EIAJ ED4701/400(401) EIAJ ED4701/400(403) Testing Conditions Ta = 25℃, Pc = Maxium Rated Power Dissipation 265±5℃, 3mm from package base Minimum Rated Storage Temperature(30min) ～Normal Temperature(15min) ～Maximum Rated Storage Temperature(30min) ～Normal Temperature(15min) Ta = 60±2℃, RH = 90±5% Ta = Maximum Rated Storage Temperature Ta = Minimum Rated Storage Temperature 10N,1time ( □0.4 and Flat Package : 5N) 98.1m/s ( 10G), 100 ～ 2KHz sweep for 20min., XYZ each direction 2 Duration 1,000 h 5s Failure 0/16 0/16 5 cycles 0/16 1,000 h 1,000 h 1,000 h 10s 2h 0/16 0/16 0/16 0/16 0/16 Failure Criteria Items Symbols Conditions EE Value of each product Irradiance of Photo Current VCE Value of each product Collector-emitter Voltage of Photo Current VCEO Value of each product Collector-emitter Voltage of Dark Current - Failure criteria Photo Current IC Testing Max. Value ≧Initial Value x 1.3 Testing Min. Value ≦ Initial Value x 0.7 Dark Current Cosmetic Appearance ICEO - Testing Max. Value ≧ Spec. Max. Value x 1.2 Occurrence of notable decoloration, deformation and cracking 2009.3.23 Page 9 PS3G07S Through-hole Phototransistor/φ3 Type Special Notice to Customers Using the Products and Technical Information Shown in This Data Sheet 1) The technical information shown in the data sheets are limited to the typical characteristics and circuit examples of the referenced products. It does not constitute the warranting of industrial property nor the granting of any license. 2) For the purpose of product improvement, the specifications, characteristics and technical data described in the data sheets are subject to change without prior notice. Therefore it is recommended that the most updated specifications be used in your design. 3) When using the products described in the data sheets, please adhere to the maximum ratings for operating voltage, heat dissipation characteristics, and other precautions for use. We are not responsible for any damage which may occur if these specifications are exceeded. 4) The products that have been described to this catalog are manufactured so that they will be used for the electrical instrument of the benchmark (OA equipment, telecommunications equipment, AV machine, home appliance and measuring instrument). The application of aircrafts, space borne application, transportation equipment, medical equipment and nuclear power control equipment, etc. needs a high reliability and safety, and the breakdown and the wrong operation might influence the life or the human body. Please consult us beforehand if you plan to use our product for the usages of aircrafts, space borne application, transportation equipment, medical equipment and nuclear power control equipment, etc. except OA equipment, telecommunications equipment, AV machine, home appliance and measuring instrument. 5) In order to export the products or technologies described in this data sheet which are under the “Foreign Exchange and Foreign Trade Control Law,” it is necessary to first obtain an export permit from the Japanese government. 6) No part of this data sheet may be reprinted or reproduced without prior written permission from Stanley Electric Co., Ltd. 7) The most updated edition of this data sheet can be obtained from the address below: http://www.stanley-components.com 2009.3.23 Page 10