N Channel Small Signal MOSFET 100mA
2N7002
SOT-23 1 Gate 2 Source 3 Drain
DRIVES SWITCHS, RELAYS, SOLENOIDS, LAMPS, DISPLAYS, ETC. LOW OFFSET VOLTAGE LOW VOLTAGE OPERATION EASILY DRIVEN WITHOUT BUFFER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Ta=25℃) PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate Threshhold Voltage Drain-Source On-Resistance Drain-Source On-Voltage On-State Drain Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Power Dissipation Junction Temperature Storage Temperature SYMBOL MIN MAX UNIT V(BR)DSS 60 Vdc IDSS 1.0 uA 1.0 mA IGSSF -10 nA VGS(th) 0.8 3.0 V RDS(on) 7.5 Ohm 7.5 Ohm V DS(on) 2.5 V 0.45 Id(on) 75 mA Ciss 60 pF Coss 25 pF Crss 5 pF ton 10 nS toff 10 nS Pc 0.35 W Tj 125 ℃ Tstg -55 125 ℃ CONDITION VGS=0, ID=10uA VDS=48V, VGS=0
VDS=48V, VGS=0, Tj=125℃
VGSF=15V, VDS=0 VDS=VGS, ID=1.0A VGS=10V, ID=0.5A VGS=4.5V, ID=75mA VGS=10V, ID=0.5A VGS=4.5V, ID=75mA VGS=4.5V, VDS=10V VDS=25V, VGS=0, f=1 MHz VDS=25V, VGS=0, f=1 MHz VDS=25V, VGS=0, f=1 MHz
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Output Characteristics
Transfer Characteristics
On Resistance VS. Temperature
Static Drain-source On Resistance
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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