8050

NPN TRANSISTOR 1.5A 8050 Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Leakage Collector-Emitter Leakage Emitter-Base Leakage Collector-Emitter Saturation Voltage Base-Emiiter Saturation Voltage DC Current Gain Collector Current Peak Collector Current Current Gain Bandwidth Output Capacitance Power Dissipation Junction Temperature Storage Temperature Hfe1 Classification Rank Range SYMBOL MIN TYP MAX UNIT CONDITION BVceo V Ic=0.1mA 25 BVcbo 45 V Ic=100uA BVebo V 5 Ie=100μA Icbo 0.1 uA Vcb=40V Iceo 0.1 uA Vce=20V Iebo 0.1 uA Veb=5V 0.6 V Ic=1500mA, Ib=50mA Vce(sat） Vbe(sat) 1.2 V Ic=1500mA, Ib=50mA Hfe1 85 Vce=1V,Ic=50mA 300 Hfe2 50 Vce=1V,Ic=500mA Ic 1.5 A Icp 8 A(Pulse) fT MHz Vcb=6V, Ic=20mA 150 Cob 32 pF Vcb=20V,Ie=0,f=1MHz Pc 1.0 W Tj 150 ℃ Tstg -55 150 ℃ B 85-160 C 120-200 D 160-300 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295