8550

PNP TRANSISTOR -1.5A 8550 Power Dissipation: 1.0W Collector Current: -1.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage BVebo Collector-Base Leakage Icbo Collector-Emitter Leakage Iceo Emitter-Base Leakage Iebo Collector-Emitter Saturation Voltage Vce(sat) Base-Emiiter Saturation Voltage Vbe(sat) DC Current Gain Hfe1 Hfe2 Collector Current Ic Peak Collector Current Icp Current Gain Bandwidth fT Output Capacitance Cob Power Dissipation Pc Junction Temperature Tj Storage Temperature Tstg Hfe1 Classification Rank Range MIN TYP MAX UNIT CONDITION V Ic=-0.1mA -25 -45 V Ic=-100uA V -5 Ie=-100μA -0.1 uA Vcb=-40V -0.1 uA Vce=-20V -0.1 uA Veb=-5V -0.6 V Ic=-1500mA, Ib=-50mA -1.2 V Ic=-1500mA, Ib=-50mA 85 Vce=-1V,Ic=-50mA 300 50 Vce=-1V,Ic=-500mA -0.5 A -8 A(Pulse) MHz Vcb=-6V, Ic=-20mA 150 32 pF Vcb=-20V,Ie=0,f=1MHz 1.0 W 150 ℃ -55 150 ℃ B 85-160 C 120-200 D 160-300 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295