8550S

PNP TRANSISTOR -0.5A 8550S Power Dissipation: 0.625W Collector Current: -0.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo V Ic=-0.1mA -25 Collector-Base Breakdown Voltage BVcbo -45 V Ic=-100uA Emitter-Base Breakdown Voltage BVebo V -5 Ie=-100μA Collector-Base Leakage Icbo -0.1 uA Vcb=-40V Collector-Emitter Leakage Iceo -0.1 uA Vce=-20V Emitter-Base Leakage Iebo -0.1 uA Veb=-5V Collector-Emitter Saturation Voltage Vce(sat) -0.6 V Ic=-500mA, Ib=-50mA Base-Emiiter Saturation Voltage Vbe(sat) -1.2 V Ic=-500mA, Ib=-50mA DC Current Gain Hfe1 85 Vce=-1V,Ic=-50mA 300 Hfe2 50 Vce=-1V,Ic=-500mA Collector Current Ic -0.5 A Peak Collector Current Icp -8 A(Pulse) Current Gain Bandwidth fT MHz Vcb=-6V, Ic=-20mA 150 Output Capacitance Cob 32 pF Vcb=-20V,Ie=0,f=1MHz Power Dissipation Pc 0.625 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 150 ℃ Hfe1 Classification Rank Range B 85-160 C 120-200 D 160-300 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295