C945

NPN TRANSISTOR 100mA C945 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage BVebo Collector-Base Leakage Icbo Emitter-Base Leakage Iebo Collector-Emitter Saturation Voltage Vce（sat） DC Current Gain Hfe Collector Current Ic Current Gain Bandwidth fT Output Capacitance Cob Power Dissipation Pc Junction Temperature Tj Storage Temperature Tstg MIN TYP MAX UNIT 50 V 60 V 5 V 0.1 uA 0.1 uA 0.18 0.3 V 90 200 600 100 mA 100 180 MHz 4.5 6.0 pF 0.25 W 125 ℃ -55 125 ℃ CONDITION Ic=1mA Ic=5uA Ie=50μA Vcb=60V Veb=5V Ic=100mA, Ib=10mA Vce=6.0V,Ic=1.0mA Vce=6V, Ie=10mA Vcb=10V,Ie=0,f=1MHz Classification of Hfe Rank Range R 90-180 Q 135-270 P 200-400 K 300-600 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295