ST2341S23RG

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23-3L
3
D
G S
1 2
1.Gate 2.Source 3.Drain
-20V/-3.3A, RDS(ON) = 30m-ohm (Typ.) @VGS = -4.5V -20V/-2.8A, RDS(ON) = 40m-ohm @VGS = -2.5V -20V/-2.3A, RDS(ON) = 53m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3L 3 41YA 1 Y: Year Code 2 A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341SRG3RG 2006. Rev.1 ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -5.3 -4.5 A IDM -20 A IS -1.0 A PD 1.25 0.80 W TJ 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient R Continuous Drain CurrentTJ=150 ) TA=25 TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25 TA=70 Operation Junction Temperature JA 140 /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341SRG3RG 2006. Rev.1 ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A ELECTRICAL CHARACTERISTICS ( Ta = 25 Parameter Unless otherwise noted ) Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -20 Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) V VDS=VGS,ID=-250uA -0.35 -0.9 V VDS=0V,VGS=±20V ±100 nA VDS=-20V,VGS=0V -1 VDS=-20V,VGS=0V TJ=55 -10 VDS -5V,VGS=-4.5V uA -6 A Drain-source On-Resistance RDS(on) VGS=-4.5V,ID=-3.3A VGS=-2.5V,ID=-2.8A VGS=-1.8V,ID=-2.3A 0.030 0.040 0.040 0.045 0.053 0.057 Forward Transconductance gfs VDS=-5V,ID=-4V 3.0 Diode Forward Voltage VSD IS=-1A,VGS=0V -0.8 -1.2 8.0 13 S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time Crss tr td(off) tf VDS=-6V VGS=-4.5V ID -3.3A VDS=-6.0V VGS=0V F=1MHz VDD=-6V RL=6 ID=-1.0A VGEN=-4.5V RG=6 1.2 nC 2.2 700 160 pF 120 15 25 35 55 60 90 40 40 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341SRG3RG 2006. Rev.1 ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A TYPICAL CHARACTERICTICS (25 Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341SRG3RG 2006. Rev.1 ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A TYPICAL CHARACTERICTICS (25 Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341SRG3RG 2006. Rev.1 ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341SRG3RG 2006. Rev.1