ST3401M23RG

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE
3
D G S 1 2


1.Gate 2.Source -30V/-4.0A, RDS(ON) = 53mΩ (Typ.) @VGS = -10V -30V/-3.2A, RDS(ON) = 60mΩ @VGS = -4.5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3.Drain PART MARKING SOT-23-3L 3 A1YA 1 Y: Year Code 2 A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3401M23RG 2005. V1 ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V ID -4.0 -3.2 A IDM -15 A Continuous Source Current (Diode Conduction) IS -1.0 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3401M23RG 2005. V1 ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max V(BR)DSS VGS=0V,ID=-250uA -30 VGS(th) VDS=VGS,ID=-250uA -0.4 IGSS Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V -1.0 V VDS=0V,VGS=±12V ±100 nA VDS=-24V,VGS=0V -1 -10 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=55℃ On-State Drain Current ID(on) VDS≦-5V,VGS=-4.5V Drain-source On-Resistance RDS(on) VGS=-10V,ID=-4.0A VGS=-4.5V,ID=-3.2A 53 60 mΩ Forward Transconductance gfs VDS=-5V,ID=-4.0V 10 S Diode Forward Voltage VSD IS=-1.0A,VGS=0V -10 uA A -0.8 -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time Crss tr td(off) tf VDS=-15V VGS=-10V ID≡-4.0A VDS=-15V VGS=0V F=1MHz VDS=-15V VGS=-15V ID=-1A RL=6Ω RG=-10Ω 14 21 1.9 nC 3.7 540 131 pF 105 10 15 15 25 31 50 20 30 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3401M23RG 2005. V1 ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3401M23RG 2005. V1 ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3401M23RG 2005. V1 ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3401M23RG 2005. V1