STN4412

N Channel Enhancement Mode MOSFET STN4412 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. FEATURE 30V/6.8A, RDS(ON) = 28mΩ @VGS = 10V 30V/5.6A, RDS(ON) = 36mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PIN CONFIGURATION SOP-8 PART MARKING SOP-8 STN4412 SYA ORDERING INFORMATION Part Number STN4412S8RG STN4412S8TG Package SOP-8P SOP-8P Part Marking STN4412 STN4412 ※ Process Code : A ~ Z ; a ~ z ※ STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A ※ STN4412S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 6.8 5.6 30 2.3 2.8 1.6 150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source OnResistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS ==15V,VGS=0V F=1MHz VDS=15V,VGS=10V ID≡2A 16 3 2.5 450 240 38 15 VDD=15V,RL=15Ω ID=1A,VGEN=-10V RG=6Ω 6 10 40 20 12 20 80 nS pF 24 nC V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=85℃ VDS≧5V,VGS=10V VGS=10V,ID=6.8A VGS=6.0V,ID=5.6A VDS=15V,ID=6.2AV IS=2.3A,VGS=0V 25 22 30 13 0.8 1.2 28 36 30 1.0 3.0 ±100 V V nA 1 5 uA A mΩ S V STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1