STN4412S8TG

厂商：
STANSON(司坦森)
封装：
描述：
STN4412S8TG - N Channel Enhancement Mode MOSFET - Stanson Technology

数据手册：

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数据手册
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STN4412S8TG 数据手册

N Channel Enhancement Mode MOSFET STN4412 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. FEATURE 30V/6.8A, RDS(ON) = 28mΩ @VGS = 10V 30V/5.6A, RDS(ON) = 36mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PIN CONFIGURATION SOP-8 PART MARKING SOP-8 STN4412 SYA ORDERING INFORMATION Part Number STN4412S8RG STN4412S8TG Package SOP-8P SOP-8P Part Marking STN4412 STN4412 ※ Process Code : A ~ Z ; a ~ z ※ STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A ※ STN4412S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 6.8 5.6 30 2.3 2.8 1.6 150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source OnResistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS ==15V,VGS=0V F=1MHz VDS=15V,VGS=10V ID≡2A 16 3 2.5 450 240 38 15 VDD=15V,RL=15Ω ID=1A,VGEN=-10V RG=6Ω 6 10 40 20 12 20 80 nS pF 24 nC V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=85℃ VDS≧5V,VGS=10V VGS=10V,ID=6.8A VGS=6.0V,ID=5.6A VDS=15V,ID=6.2AV IS=2.3A,VGS=0V 25 22 30 13 0.8 1.2 28 36 30 1.0 3.0 ±100 V V nA 1 5 uA A mΩ S V STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1 N Channel Enhancement Mode MOSFET STN4412 6.8A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4412 2007. V1

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STN4412S8TG

1. 物料型号： - 型号为STN4412S8RG和STN4412S8TG，分别代表SOP-8P封装和不同的包装方式（R代表卷带包装，T代表管装）。

2. 器件简介： - STN4412是一款N沟道增强型功率场效应晶体管，使用高单元密度、DMOS沟槽技术生产，特别适用于低电压应用，如电源管理和电池供电电路中的高端开关。

3. 引脚分配： - 采用SOP-8封装，具体引脚配置未在文档中详细说明，通常SOP-8封装的引脚从左到右依次为G（栅极）、S（源极）、D（漏极）。

4. 参数特性： - 漏源电压（VDSS）：30V - 栅源电压（VGSS）：±20V - 连续漏电流（ID）：6.8A（25°C时）/ 5.6A（70°C时） - 脉冲漏电流（IDM）：30A - 栅阈值电压（VGS(th)）：1.0V至3.0V - 栅漏电流（IGSS）：±100nA - 导通电阻（RDS(on)）：28mΩ（@VGS=10V时）/ 36mΩ（@VGS=4.5V时）

5. 功能详解： - STN4412具有超低导通电阻和最大直流电流能力，适用于需要高端开关的应用。

6. 应用信息： - 适用于电源管理和电池供电电路中的高端开关。

7. 封装信息： - 提供SOP-8P封装，具体尺寸如下： - A: 1.47mm至1.73mm - A1: 0.10mm至0.25mm - A2: 1.45mm - b: 0.33mm至0.51mm - C: 0.19mm至0.25mm - D: 4.80mm至4.95mm - E: 5.80mm至6.20mm - E1: 3.80mm至4.00mm - L: 0.38mm至1.27mm

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