STN4920S8RG

STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE 30V/7.2A, RDS(ON) = 28mΩ@VGS = 10V 30V/6.0A, RDS(ON) = 36mΩ@VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number STN4920S8RG STN4920S8TG Package SOP-8 SOP-8 Part Marking STN4920 STN4920 ※ Process Code : A ~ Z ; a ~ z ※ STN4920S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STN4920S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 7.2 6.0 20 1.7 2.8 1.8 -55/150 -55/150 65 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Tran Conductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Turn-Off Time Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS TJ=55℃ ID(on) RDS(on) VGS=0V,ID=250uA VDS=VGS,ID=250 uA VDS=0V,VGS=±20V VDS=30V,VGS=0V VDS=30V,VGS=0V VDS≥5V,VGS=4.5V VGS=10V, ID=7.2A VGS=4.5V, ID=6.0A VDS=15.0V,ID=6.2A IS=2.3A,VGS=0V 30 1.0 3.0 ±100 1 5 20 0.022 0.028 0.030 0.036 V V nA uA A Ω S 1.2 V gfs VSD 13 0.8 Qg Qgs Qgd Ciss Coss Crss td(on) tr VDS=15V,VGS=10V ID=7.2A 30 7.5 3.5 450 nC VDS=15.0V,VGS=0V f=1MHz 240 38 12 20 20 90 30 pF td(off) tf VDD=15V,RL=15Ω ID=1A,VGEN=10V RG=6Ω 10 60 15 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1