STN8205D

Dual N Channel Enhancement Mode MOSFET STN8205D 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 G1 D G2 FEATURE 20V/4.0A, RDS(ON) = 30m-ohm@VGS =4.5V 20V/3.4A, RDS(ON) =42m-ohm@VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSOP-6 package design STN8205 SYA S1 D S2 S：Subcontractor Y: Year A: Week Code ORDERING INFORMATION Part Number STN8205DST6RG Package TSOP-6 Part Marking SYA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST8205DST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 Dual N Channel Enhancement Mode MOSFET STN8205D 5.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID Typical 20 +/-20 5.0 3.4 IDM IS PD 20 2 1.15 0.75 TJ TSTG RθJA 150 -55/150 100 ℃ ℃ ℃/W A A W Unit V V A Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 Dual N Channel Enhancement Mode MOSFET STN8205D 5.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss Td(on) tr Td(off) tf VDS=8V,VGS=0V f=1MHz VDD=10V, RL=10Ω, ID=4.0A, VGEN=4.5V, RG=6Ω VDS=10V,VGS=4.5V,VDS=2.8A VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=+/-20V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=85℃ VDS≦5V,VGS=4.5V VGS=4.5V,ID=4.0A VGS=2.5V,ID=3.4A VDS=5V,ID=3.6A IS=1.6A,VGS=0V 5 0.025 0.030 0.037 0.042 13 0.8 10.5 2.0 2.5 805 155 122 18 5 45 22 pF nC 1.2 20 0.6 1.2 ±100 1 5 V V nA uA A Ω S V Symbol Condition Min Typ Max Unit nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 Dual N Channel Enhancement Mode MOSFET STN8205D 5.0A TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 Dual N Channel Enhancement Mode MOSFET STN8205D 5.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 Dual N Channel Enhancement Mode MOSFET STN8205D 5.0A TSOP-6 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1