STP3481

P Channel Enhancement Mode MOSFET STP3481 -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE -30V/-5.2A, RDS(ON) = 55m-ohm @VGS = -10V -30V/-4.2A, RDS(ON) = 75m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design 1.2.5.6.Drain PART MARKING TSOP-6P 3.Gate 4.Source Y: Year Code A: Process Code ORDERING INFORMATION Part Number STP3481S6RG ※ Process Code : A ~ Z ; a ~ z 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 Package TSOP-6P Part Marking 81YA P Channel Enhancement Mode MOSFET STP3481 -5.2A ※ STP3481S6RG S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -5.2 -4.2 -20 -1.7 2.0 1.3 150 -55/150 90 Unit V V A A A W ℃ ℃ ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 P Channel Enhancement Mode MOSFET STP3481 -5.2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=-250uA VDS=VGS,ID=-250uA VDS=0V,VGS=±20V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-10V VGS=-10.0V,ID=-5.2A VGS=-4.5V,ID=-4.2A VDS=-5.0V,ID=-4.0A IS=-1.0A,VGS=0V -30 -1.0 -3.0 ±100 -1 -10 -10 0.041 0.055 0.058 0.075 V V Na UA A Ω S V 10 -0.8 -1.2 VDS=-15V VGS=-10V ID≣-4.0A VDS=-15V VGS=0V F=1MHz VDD=-15V RL=15Ω ID=-1.0A VGEN=-10V RG=6Ω 14 1.9 3.7 540 131 105 10 15 32 21 21 nC pF 16 25 50 32 nS td(off) tf 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 P Channel Enhancement Mode MOSFET STP3481 -5.2A TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 P Channel Enhancement Mode MOSFET STP3481 -5.2A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 P Channel Enhancement Mode MOSFET STP3481 -5.2A TSOP-6P PACKAGE OUTLINE C 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1