STP6621

STP6621 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. PIN CONFIGURATION SOP-8 FEATURE




-60V/-10.0A, RDS(ON) = 23mΩ (Typ.) @VGS =-10V -60V/-8.0A, RDS(ON) = 28mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 STP6621 P Channel Enhancement Mode MOSFET -18.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Symbol Typical Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V ID -18.0 -11.0 A IDM -50 A IS -4.3 A PD 3.1 2.0 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 Parameter Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 STP6621 P Channel Enhancement Mode MOSFET -18.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=-250uA -60 VGS(th) VDS=VGS,ID=-250 uA -0.8 Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS=-5V,VGS=10V Drain-source On-Resistance RDS(on) VGS=-10V, ID=-10A VGS=-4.5V, ID=-8A Forward Tran Conductance gfs VDS=-5V,ID=-6.7A 18 Diode Forward Voltage VSD IS=-2.3A,VGS=0V -0.7 -1.0 47 55 Static Drain-Source Breakdown Voltage Gate Threshold Voltage V -2.5 V VDS=0V,VGS=±20V ±100 nA VDS=-48V,VGS=0V VDS=-48V,VGS=0V TJ=85℃ -1 -10 -18 uA A 0.023 0.030 0.028 0.038 Ω S V Dynamic Total Gate Charge Qg VDS=-30V,VGS=-10 ID≡-6.2A Gate-Source Charge Qgs Gate-Drain Charge Qgd 9.3 Input Capacitance Ciss 2410 Output Capacitance Coss Reverse TransferCapacitance Crss 125 Turn-On Time td(on) 9.8 Turn-Off Time tr td(off) VDS =-30V,VGS=0V f=1MHz VDS=-30V,RL=4.7Ω VGS=-10V,RGEN=3Ω tf 9.2 179 6.1 nC pF nS 44 12.9 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 STP6621 P Channel Enhancement Mode MOSFET -18.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 STP6621 P Channel Enhancement Mode MOSFET -18.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 STP6621 P Channel Enhancement Mode MOSFET -18.0A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1