STP9435S8RG

P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, notebook computer power management, and other battery powered circuits. FEATURE -30V/-5.6A, RDS(ON) = 60mΩ @VGS = -10V -30V/-5.0A, RDS(ON) = 70mΩ @VGS = -6.0V -30V/-4.4A, RDS(ON) = 80mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STP9435 PIN CONFIGURATION SOP-8 ORDERING INFORMATION Part Number STP9435S8RG STP9435S8TG Package SOP-8P SOP-8P Part Marking STP9435 STP9435 ※ Process Code : A ~ Z ; a ~ z ※ STP9435S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STP9435S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 P Channel Enhancement Mode MOSFET - 5.6A STP9435 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -6.5 -4.6 -30 -2.3 2.5 1.6 150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 P Channel Enhancement Mode MOSFET - 5.6A STP9435 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source OnResistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS ==-15V,VGS=0V f=1MHz VDS=-15V,VGS=-10V ID≡-3.5A 16 2.3 4.5 680 120 75 14 VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 16 43 30 25 26 70 52 nS pF 24 nC V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=0V,VGS=±20V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=85℃ VDS=-5V,VGS=-4.5V VGS=-10V,ID=-5.6A VGS=-6.0V,ID=-5.0A VGS=-4.5V,ID=-4.4A VDS=-15V,ID=-5.7V IS=-2.3A,VGS=0V -10 47 52 58 13 -0.8 -1.2 60 70 80 -30 -1.0 -3.0 ±100 V V nA -1 -5 uA A mΩ S V STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 P Channel Enhancement Mode MOSFET - 5.6A STP9435 TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 P Channel Enhancement Mode MOSFET - 5.6A TYPICAL CHARACTERICTICS STP9435 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 P Channel Enhancement Mode MOSFET - 5.6A TYPICAL CHARACTERICTICS STP9435 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 P Channel Enhancement Mode MOSFET - 5.6A PACKAGE OUTLINE SOP-8P STP9435 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1