STP9547

P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE -40V/-5.6A, RDS(ON) = 55mΩ @VGS = -10V -40V/-5.2A, RDS(ON) = 80mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design STP9547 PART MARKING SOP-8 ORDERING INFORMATION Part Number STP9547S8RG STP9547S8TG Package SOP-8P SOP-8P Part Marking STP9547 STP9547 ※ Process Code : A ~ Z ; a ~ z ※ STP9547S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STP9547S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 P Channel Enhancement Mode MOSFET - 6.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -40 ±20 -6.8 -5.2 -30 -2.3 2.5 1.6 150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STP9547 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 P Channel Enhancement Mode MOSFET - 6.8A STP9547 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source OnResistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS ==-15V,VGS=0V f=1MHz VDS=-15V,VGS=-10V ID≡-3.5A 16 2.3 4.5 680 120 75 14 VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 16 43 30 25 26 70 52 nS pF 24 nC V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=0V,VGS=±20V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=85℃ VDS=-5V,VGS=-4.5V VGS=-10V,ID=-5.6A VGS=-4.5V,ID=-5.2A VDS=-15V,ID=-5.6V IS=-2.3A,VGS=0V -10 47 62 13 -0.8 -1.2 60 80 -40 -1.0 -3.0 ±100 V V nA -1 -5 uA A mΩ S V 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 P Channel Enhancement Mode MOSFET - 6.8A TYPICAL CHARACTERICTICS STP9547 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 P Channel Enhancement Mode MOSFET - 6.8A STP9547 TYPICAL CHARACTERICTICS 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 P Channel Enhancement Mode MOSFET - 6.8A STP9547 TYPICAL CHARACTERICTICS 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 P Channel Enhancement Mode MOSFET - 6.8A STP9547 PACKAGE OUTLINE SOP-8P 7 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1