1898

SD1898 RF & MICROWAVE TRANSISTORS 1 .6 GHz SATCOM APPLICATIONS . . . . . . 1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE P OUT = 32 W MIN. WITH 9 dB GAIN .400 SQ. 2LFL (M186) epoxy sealed ORDER CODE SD1898 BRANDING 1898 PIN CONNECTION DESCRIPTION The SD1898 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1898 is packaged in a cost-effective epoxy sealed housing. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 45 15 3.5 7.8 87.5 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 2.0 °C/W 1/4 SD1898 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE DYNAMIC Symbol IC = 10mA IC = 10mA IE = 10mA VCE = 5V IE = 0mA IB = 0mA IC = 0mA IC = 2A 45 12 3.5 15 — — — — — — — 150 V V V — Test Conditions Value Min . Typ. Max. Unit POUT GP ηc f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz PIN = 4.0 W PIN = 4.0 W PIN = 4.0 W VCE = 28 V VCE = 28 V VCE = 28 V 32 9.0 40 — — — — — — W dB % TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT EFFICIENCY vs POWER INPUT 2/4 SD1898 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN FREQ. 1550 MHz TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 1600 MHz 1650 MHz ZIN (Ω) 6.6 + j 15.0 8.3 + j 14.5 12.0 + j 12.0 ZCL (Ω) 5.6 − j 2.5 4.7 − j 1.9 4.1 − j 1.4 T EST CIRCUIT C1, C2 : .4 - 2.5pF Johanson Capacitor C3 : 15,000pF EMI Filter C4 : 1000pF Chip Capacitor L1, L2 : 5 Turns Choke Diameter Wire .025” I.D. .125” Substrate: Er = 10.2, Height .050”, 1 Oz. Copper All Dimensions in Inches. 3/4 SD1898 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0186 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4