1N4148

1N4148 Silicon Epitaxial Planar Switching Diode Applications • High-speed switching This diode is also available in MiniMELF case with the type designation LL4148 Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX H C Max. 3.9 ST Min. 27.5 E T M E S Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25℃) Parameter Min. 27.5 Max. 1.9 Symbol Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA IFSM 0.5 1 4 A Ptot 500 1) mW Tj 200 ℃ Tstg - 65 to + 200 ℃ Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 14/01/2013 Rev: 01 1N4148 Characteristics at Ta = 25℃ Parameter Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150℃ Symbol Min. Max. Unit V(BR)R V(BR)R 100 75 - V V VF - 1 V IR IR IR - 25 5 50 nA µA µA - 4 pF - 2.5 V - 4 ns - 0.35 1) K/mW 0.45 - - Capacitance at VR = 0, f = 1 MHz Ctot Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Vfr Reverse Recovery Time at IF = 10 mA to IR = 1 mA, Irr = 0.1 x IR, VR = 6 V, RL = 100 Ω trr E T M E S RthA Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V ηV Vo 2nF 5K ~ ~ ~ VRF =2V Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 60 1) H C Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 14/01/2013 Rev: 01 1N4148 Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature mW 1000 1N 4148 1N 4148 Tj=25 oC f=1MHz 900 1.1 800 Ctot(VR ) Ctot(0V) 700 P tot 1.0 600 500 H C 0.9 400 300 0.8 200 E T M E S 100 0.7 0 0 0 o 200 C 100 0 2 4 Tamb Leakage current versus junction temperature nA 10 4 6 10 V 8 VR Forward characteristics mA 1N 4148 10 1N 4148 3 5 2 10 2 10 3 IR o Tj=100 C iF 5 o Tj=25 C 10 2 10 2 5 1 2 10 10 -1 5 VR=20V 2 1 0 o 200 C 100 10 -2 0 Tj 1 2V VF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 14/01/2013 Rev: 01