23NM60ND

STL23NM60ND N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) PowerFLAT™ (8x8) HV Preliminary data Features Type STL23NM60ND VDSS (@Tjmax) 650 V RDS(on) max < 0.180 Ω ID 19.5 A(1) 1. This value is rated according to Rthj-case. ■ ■ ■ ■ ■ The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities Figure 1. Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order code Marking 23NM60ND Package PowerFLAT™ 8x8 HV Packaging Tape and reel STL23NM60ND April 2010 Doc ID 17439 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STL23NM60ND Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 17439 Rev 1 STL23NM60ND Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Value 600 ± 25 19.5 11.7 78 2.75 1.75 11 150 3 9 700 40 - 55 to 150 150 Unit V V A A A A A A W W A mJ V/ns °C °C ID (1) IDM (1),(2) (3) (3) ID ID IDM(2),(3) Drain current (pulsed) PTOT PTOT IAR EAS dv/dt (4) Tstg Tj (3) (1) Total dissipation at TC = 25 °C (steady state) Total dissipation at TC = 25 °C (steady state) Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. The value is rated according to Rthj-case 2. Pulse width limited by safe operating area 3. When mounted on FR-4 board of inch², 2oz Cu 4. ISD ≤ 19.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb(1) Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purposes Value 0.83 45 300 Unit °C/W °C/W °C 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 17439 Rev 1 3/11 Electrical characteristics STL23NM60ND 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) 1. On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 480 V, ID = 19.5 A, VGS = 10 V VDS = Max rating, VDS = Max rating,@125 °C VGS = ±20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 10 A 3 4 Min. 600 48 1 100 100 5 Typ. Max. Unit V V/ns µA µA nA V Ω 0.150 0.180 Characteristic value at turn off on inductive load Table 5. Symbol Ciss Coss Crss Coss eq.(1) Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 2050 80 8 318 Max. Unit pF pF pF pF VDS = 50 V, f =1 MHz, VGS = 0 - - VGS = 0, VDS = 0 to 480 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 480 V, ID = 19.5 A VGS = 10 V (see Figure 3) - - Rg Qg Qgs Qgd - 4 70 10 30 - Ω nC nC nC - - 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/11 Doc ID 17439 Rev 1 STL23NM60ND Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 2) Min. Typ. 25 45 90 40 Max. Unit ns ns ns ns - - Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19.5 A, VGS=0 ISD = 19.5 A, di/dt =100 A/µs, VDD = 100 V (see Figure 4) VDD = 100 V di/dt =100 A/µs, ISD = 19.5 A, Tj = 150 °C (see Figure 4) Test conditions Min. Typ. Max. Unit 190 1.2 13 260 2.0 15 19.5 78 1.3 A A V ns µC A ns µC A - 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 17439 Rev 1 5/11 Test circuits STL23NM60ND 3 Figure 2. Test circuits Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 2200 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. µF 3.3 µF VDD Vi=20V=VGMAX 2200 µF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100µH B D G 3.3 µF 1000 µF L VD 2200 µF 3.3 µF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 6. Unclamped inductive waveform V(BR)DSS VD Figure 7. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 6/11 Doc ID 17439 Rev 1 STL23NM60ND Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17439 Rev 1 7/11 Package mechanical data STL23NM60ND Table 8. PowerFLAT™ 8x8 HV mechanical data mm Dim. Min. A A1 b c D E D2 E2 e L 0.40 7.05 4.15 0.95 0.80 Typ. 0.90 0.02 1.00 0.10 8.00 8.00 7.20 4.30 2.00 0.50 0.60 7.30 4.40 Max. 1.00 0.05 1.05 Figure 8. PowerFLAT™ 8x8 HV drawing mechanical data e b BOTTOM VIEW PIN#1 ID L E2 D 0.40 D2 INDEX AREA E SIDE VIEW TOP VIEW A A1 SEATING PLANE 0.08 C AM05542v1 8/11 Doc ID 17439 Rev 1 STL23NM60ND Package mechanical data Figure 9. PowerFLAT™ 8x8 HV recommended footprint 7.30 2.00 1.05 0.60 AM05543v1 Doc ID 17439 Rev 1 4.40 9/11 Revision history STL23NM60ND 5 Revision history Table 9. Date 28-Apr-2010 Document revision history Revision 1 First release Changes 10/11 Doc ID 17439 Rev 1 STL23NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. 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