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® 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Total Dissipation at T amb ≤ 2 5 o C at T C ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 140 80 7 1 0.8 5 -65 to 175 175 Unit V V V A W W o o C C September 2002 1/4 2N3019 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 30 187.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Base Breakdown Voltage (I E = 0 ) Test Conditions V CB = 9 0 V V CB = 9 0 V V EB = 5 V I C = 1 00 µ A 140 T C = 1 50 o C Min. Typ. Max. 10 10 10 Unit nA µA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0 ) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 1 0 mA 80 V I E = 1 00 µ A 7 V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = 1 50 mA I C = 5 00 mA I C = 1 50 mA I C = 0 .1 mA I C = 1 0 mA I C = 1 50 mA I C = 5 00 mA IC = 1A I C = 1 50 mA T amb = -55 o C IC = 1 mA I C = 5 0 mA IE = 0 IC = 0 IB = 1 5 mA IB = 5 0 mA I B = 1 5 mA V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V f = 1 KHz 50 90 100 50 15 40 80 100 0.2 0.5 1.1 V V V 300 h fe ∗ fT C CBO C EBO NF r bb’ C b’c Small Signal Current Gain Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure V CE = 5 V 400 MHz 12 60 4 pF pF dB ps V CE = 1 0 V f = 20MHz f = 1MHz f = 1MHz V CB = 1 0 V V EB = 0 .5 V I C = 0 .1 mA f = 1KHz V CE = 1 0 V Rg = 1KΩ V CE = 1 0 V f = 4MHz F eedback Time I C = 1 0 mA Constant ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 400 2/4 2N3019 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 2N3019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4