24NM60N

STL24NM60N N-channel 600 V, 0.200 Ω 16 A PowerFLAT™ 8x8 HV , MDmesh™ II Power MOSFET Features Type STL24NM60N VDSS @ TJmax 650 V RDS(on) max < 0.215 Ω ID 16 A (1) 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications ■ Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 24NM60N Package PowerFLAT™ 8x8 HV Packaging Tape and reel Order code STL24NM60N November 2011 Doc ID 18363 Rev 2 1/14 www.st.com 14 Contents STL24NM60N Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/14 Doc ID 18363 Rev 2 STL24NM60N Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (continuous) at Tamb = 25 °C Drain current (continuous) at Tamb = 100 °C Drain current (pulsed) Total dissipation at Tamb = 25 °C Total dissipation at TC = 25 °C Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 600 ± 25 16 10 3.3 1.5 13.2 3 125 4 300 15 - 55 to 150 150 Unit V V A A A A A W W A mJ V/ns °C °C ID (1) ID ID IDM (2) (2) (2),(3) PTOT (2) PTOT(1) IAR EAS dv/dt (4) Tstg Tj 1. The value is rated according to Rthj-case 2. When mounted on FR-4 board of inch², 2oz Cu 3. Pulse width limited by safe operating area 4. ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb(1) Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Value 1 45 Unit °C/W °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 18363 Rev 2 3/14 Electrical characteristics STL24NM60N 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 600 1 100 ±100 3 4 0.2 5 0.215 Typ. Max. Unit V µA µA nA V Ω Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C Gate-body leakage current (VDS = 0) VGS = ± 25 V Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source on resistance VGS = 10 V, ID = 8 A Table 5. Symbol Ciss Coss Crss Coss eq.(1) RG Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Output equivalent capacitance Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 1400 44 7.4 190 5 46 7 23 Max. Unit pF pF pF pF Ω nC nC nC VDS = 50 V, f = 1 MHz, VGS = 0 - - VDS = 0 to 480 V, VGS = 0 f = 1 MHz open drain VDD = 480 V, ID = 16 A, VGS = 10 V (see Figure 3) - - - - 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. Table 6. Symbol td(off) tr tc tf Switching times Parameter Turn-off delay time Rise time Cross time Fall time Test conditions VDD = 300 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 4) Min. Typ. 11.5 16.5 73 37 Max Unit ns ns ns ns - - 4/14 Doc ID 18363 Rev 2 STL24NM60N Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16 A, VGS = 0 ISD = 16 A, di/dt = 100 A/µs VDD = 100 V (see Figure 4) ISD = 16 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 4) Test conditions Min. 340 4.6 27 4.4 5.7 28 Typ. Max. Unit 16 64 1.5 A A V ns µC A ns µC A - 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 18363 Rev 2 5/14 Test circuits STL24NM60N 3 Figure 2. Test circuits Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 2200 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. μF 3.3 μF VDD Vi=20V=VGMAX 2200 μF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100μH B D G 3.3 μF 1000 μF L VD 2200 μF 3.3 μF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 6. Unclamped inductive waveform V(BR)DSS VD Figure 7. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 6/14 Doc ID 18363 Rev 2 STL24NM60N Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 18363 Rev 2 7/14 Package mechanical data STL24NM60N Table 8. PowerFLAT™ 8x8 HV mechanical data mm Dim. Min. A A1 b D E D2 E2 e L aaa bbb ccc 0.40 7.05 4.15 0.80 0.00 0.95 Typ. 0.90 0.02 1.00 8.00 8.00 7.20 4.30 2.00 0.50 0.10 0.10 0.10 0.60 7.30 4.40 Max. 1.00 0.05 1.05 8/14 Doc ID 18363 Rev 2 STL24NM60N Package mechanical data Figure 8. PowerFLAT™ 8x8 HV drawing mechanical data b bbb CAB BOTTOM VIEW PIN#1 ID L 0.40 D2 ccc C A 0.20±0.008 SIDE VIEW E2 A1 C SEATING PLANE 0.08 C D A B INDEX AREA aaa C TOP VIEW aaa C 8222871_Rev_B Doc ID 18363 Rev 2 E 9/14 Package mechanical data STL24NM60N Figure 9. PowerFLAT™ 8x8 HV recommended footprint (1) 7.30 7.70 2.00 1.05 Footprint 1. All dimensions are in mm 10/14 Doc ID 18363 Rev 2 0.60 4.40 STL24NM60N Packaging mechanical data 5 Packaging mechanical data Figure 10. PowerFLAT™ 8x8 HV tape P2 (2.0±0.1) T (0.30±0.05) D0 ( 1.55±0.05) E (1.75±0.1) P0 (4.0±0.1) F (7.50±0.1) B0 (8.30±0.1) D1 ( 1.5 Min) P1 (12.00±0.1) K0 (1.10±0.1) A0 (8.30±0.1) Note: Base and Bulk quantity 3000 pcs 8229819_Tape_revA Figure 11. PowerFLAT™ 8x8 HV package orientation in carrier tape Doc ID 18363 Rev 2 11/14 W (16.00±0.3) Packaging mechanical data Figure 12. PowerFLAT™ 8x8 HV reel STL24NM60N 8229819_Reel_revA 12/14 Doc ID 18363 Rev 2 STL24NM60N Revision history 6 Revision history Table 9. Date 05-Jan-2011 10-Nov-2011 Document revision history Revision 1 2 First release. Changes Section 4: Package mechanical data has been updated. Minor text changes. Doc ID 18363 Rev 2 13/14 STL24NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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