2DPFS20V

P-CHANNEL 20V - 0.14 Ω - 2.5A SO-8 2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 20 V SCHOTTKY IF(AV) 3A RDS(on) < 0.20Ω (@4.5V) < 0.25Ω (@2.7V) VRRM 30 V ID 2.5 A VF(MAX) 0.51 V STS2DPFS20V DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot Parameter Dain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 20 20 ± 12 2.5 1.58 10 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM Parameter Value Unit Repetitive Peak Reverse Voltage RMS Forward Curren Average Forward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL=125 oC δ =0.5 tp= 10 ms Sinusoidal tp=100 µs 30 20 3 75 1 10000 V A A A A V/µs IF(RMS) IF(AV) IFSM IRSM dv/dt (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed November 2002 . 1/8 STS2DPFS20V TERMAL DATA Rthj-amb Rthj-amb Tstg Tj (*)Thermal (*)Thermal Resistance Junction-ambient MOSFET Resistance Junction-ambient SCHOTTKY Storage Temperature Range Maximum Lead Temperature For Soldering Purpose MAX 62.5 100 -55 to 150 150 oC/W oC/W oC oC (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 12 V Min. 20 1 10 ±100 Typ. Max. Unit V µA µA nA IGSS ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 4.5 V VGS = 2.7 V ID = 250 µA ID = 1 A ID = 1 A Min. 0.6 0.14 0.20 0.20 0.25 Typ. Max. Unit V Ω Ω SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS Symbol IR(*) VF(*) Parameter Reversed Leakage Current Forward Voltage drop Test Conditions TJ= 25 oC TJ= 125 oC TJ= 25 oC TJ= 125 oC VR= 30 V VR= 30 V IF= 3 A IF= 3 A Min. Typ. 30 0.40 Max. 0.2 100 0.51 0.46 Unit mA mA mA mA DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS= 15 V ID=1 A Min. Typ. 4 315 87 17 Max. Unit S pF pF pF VDS = 15V, f = 1 MHz, VGS = 0 2/8 STS2DPFS20V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 1 A VDD = 10 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) VDD= 10V ID= 2A VGS=4.5V Min. Typ. 38 30 3.5 0.34 0.8 4.7 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 1 A VDD = 10 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) Min. Typ. 45 11 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2 A VGS = 0 15 7.5 1 Test Conditions Min. Typ. Max. 2 10 1.2 Unit A A V ns nC A di/dt = 100A/µs ISD = 2 A VDD = 10 V Tj = 150°C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS2DPFS20V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS2DPFS20V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STS2DPFS20V Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS2DPFS20V SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS2DPFS20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8