2N2102

2N2102 ® EPITAXIAL PLANAR NPN ■ GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and industrial equipments. ) s ( ct u d o let r P e o s b O ) s ( t c TO-39 INTERNAL SCHEMATIC DIAGRAM u d o r P e t e l o s b O ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 120 V Collector-Emitter Voltage (I B = 0) 65 V V CER Collector-Emitter Voltage (R BE ≤ 10Ω) 80 V V EBO Emitter-Base Voltage (I C = 0) 7 V Collector Current 1 A Total Dissipation at T amb ≤ 25 o C o at T C ≤ 25 C Storage Temperature 1 5 W W V CBO Collector-Base Voltage (I E = 0) V CEO IC P tot T stg Tj Max. Operating Junction Temperature December 2002 -65 to 175 o C 175 o C 1/4 2N2102 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 30 150 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Collector Cut-off Current (I E = 0) V CB = 60 V V CB = 60 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 120 I C = 30 mA 65 V (BR)CBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Collector-Emitter Saturation Voltage I C = 150 mA I B = 15 mA V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 150 mA I B = 15 mA DC Current Gain IC IC IC IC IC IC 10 µA 100 µA 10 mA 150 mA 500 mA 1A V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V h FE ∗ h fe ∗ High Frequency Current Gain NF Noise Figure C CBO let C EBO I C = 50 mA f = 20 MHz I C = 300 µA BW = 1 Hz IE = 0 b O V CE = 10 V Emitter-Base IC = 0 V EB = 0.5 V Capacitance ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % o s b 2/4 Unit 2 2 nA µA 5 nA V t c u d o r 10 20 35 40 25 10 V 0.5 V 1.1 V 120 6 8 dB f = 1MHz 15 pF f = 1MHz 80 pF VCE = 10 V f = 1 KHz R g = 510 Ω V CB = 10 V Max. (s) P e let so ) (s ct u d o r P e Collector-Base Capacitance = = = = = = Typ. T C = 150 o C V CE(sat) ∗ O Min. I CBO 2N2102 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 MAX. 0.500 B 0.49 D 6.6 E 8.5 F 9.4 G TYP. 0.019 ) s ( ct 0.260 du e t e ol 5.08 0.200 H 1.2 I 0.9 )- L s ( t c o r P 0.334 0.370 0.047 s b O 0.035 45o (typ.) u d o r P e t e l o sI b O D G A E F H B L P008B 3/4 2N2102 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4