2N2369

2 N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO I CM Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current (t = 10 µs) Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.5 0.36 1.2 0.68 – 65 to 200 Unit V V V V A W W W °C T s t g, T j Products approve to CECC 50004-022/023 available on request. d January 1989 1/4 2N2369 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO V ( BR) V (BR) V (BR) V ( BR) V CE V BE CBO Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 20 V V CB = 20 V I C = 10 µA I C = 10 µA I C = 10 mA I E = 10 µA I C = 10 mA I C = 10 mA I B = 1 mA I B = 1 mA T am b = 150 °C Min. Typ. Max. 0.4 30 Unit µA µA V V V V 40 40 15 4.5 0.2 0.7 40 20 20 500 650 2.5 6 9 13 4 13 12 18 0.75 0.25 0.85 120 CE S CEO * EBO (s at )* V V (s at ) * h F E* V CE = 1 V I C = 10 mA I C = 100 mA V CE = 2 V I C = 10 mA V CE = 1 V T amb = – 55 °C I C = 10 mA f = 100 MHz IE = 0 f = 1 MHz V CE = 10 V V CB = 5 V fT C CBO ts to n t off Transition Frequency Collector-base Capacitance Storage Time Turn-on Time Turn-off Time MHz pF ns ns ns I C = 10 mA V CC = 10 V I B1 = – I B2 = 10 mA I C = 10 mA I B1 = 3 mA I C = 10 mA I B1 = 3 mA V CC = 3 V V CC = 3 V I B 2 = – 1.5 mA * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/4 2N2369 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 3/4 2N2369 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4