2N4033
®
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The 2N4033 is a silicon Planar Epitaxial PNP
transistor in Jedec TO-39 metal case primary
intended for large signal, low noise industrial
applications.
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TO-39
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INTERNAL SCHEMATIC DIAGRAM
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ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
-80
V
V CEO
Collector-Emitter Voltage (I B = 0)
-80
V
V EBO
Emitter-Base Voltage (I C = 0)
-5
V
Collector Current
-1
A
Total Dissipation at T amb ≤ 45 o C
o
at T C ≤ 45 C
Storage Temperature
0.8
4
W
W
IC
P tot
T stg
Tj
Parameter
Max. Operating Junction Temperature
September 2002
-55 to 175
o
C
175
o
C
1/6
2N4033
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
37.5
187.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CBO
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-50
-50
nA
µA
Collector Cut-off
Current (I E = 0)
V CE = -60 V
V CE = -60 V
Collector-Base
Breakdown Voltage
(I E = 0)
I C = -10 µA
-80
V
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = -10 mA
-80
V
-5
V
V (BR)CBO
T C = 150 o C
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = -10 µA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = -150 mA
I C = -500 mA
I B = -15 mA
I B = -50 mA
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = -150 mA
I C = -500 mA
I B = -15 mA
I B = -50 mA
DC Current Gain
I C = -100 µA
I C = -100 mA
I C = -500 mA
I C = -1 A
I C = -100 mA
T amb = -55 o C
h FE ∗
fT
I C = -50 mA V CE = -10 V
f = 100 MHz
C EBO
Emitter-Base
Capacitance
IE = 0
C CBO
Collector-Base
Capacitance
IC = 0
t s∗∗
Storage Time
t f ∗∗
Fall Time
t
e
l
o
Turn-on Time
V
V
-0.9
-1.1
V
V
300
40
150
500
MHz
f = 1MHz
110
pF
V CB = -10 V
f = 1MHz
20
pF
I C = -500 mA
V CC = -30 V
I B1 = -IB2 = -50 mA
350
ns
I C = -500 mA
V CC = -30 V
I B1 = -IB2 = -50 mA
50
ns
I C = -500 mA
V CC = -30 V
I B1 = -IB2 = -50 mA
100
ns
ct
* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
∗∗ See Test Circuit
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75
100
70
25
-0.15
-0.5
V EB = -0.5 V
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Transition Frequency
t on ∗∗
2/6
V CE = -5 V
V CE = -5 V
V CE = -5 V
V CE = -5 V
V CE = -5 V
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2N4033
Collector Emitter Saturation Voltage.
Transition Frequency.
Base Emitter Saturation Voltage.
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Collector Base Capacitance.
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3/6
2N4033
Test Circuit for ton, ts, tf.
PULSE GENERATOR :
tr, tf < 20 ns
PW = 1.0 µs
ZIN = 50 Ω
DC < 2 %
TO OSCILLOSCOPE :
tr ≈ 10 ns
ZIN > 100 KΩ
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4/6
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2N4033
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
5.08
H
1.2
I
0.9
)
s
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ct
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0.035
D
A
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let
0.047
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H
ro
45o (typ.)
L
I
c
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0.200
L
B
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0.370
P008B
5/6
2N4033
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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