2N5192

2N5191 2N5192 MEDIUM POWER NPN SILICON TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP type of 2N5192 is 2N5195. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj June 1997 Parameter 2N5191 Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature 60 60 5 4 7 1 40 -65 to 150 150 Value 2N5192 80 80 Unit Unit V V V A A A W o o C C 1/4 2N5191 / 2N5192 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX I CEO I EBO Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (V BE = - 1.5V) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CB = r ated V CBO V CE = r ated V CEO V CE = r ated V CEO V CE = r ated V CEO V EB = 5 V I C = 1 00 mA for 2 N5191 for 2 N5192 I C = 1 .5 A IC = 4 A I C = 1 .5 A I C = 1 .5 A for 2 N5191 for 2 N5192 IC = 4 A for 2 N5191 for 2 N5192 IC = 1 A I B = 0 .15 A IB = 1 A V CE = 2 V VCE = 2 V 25 20 V CE = 2 V 10 7 V CE = 10 V 2 MHz 100 80 Min. Typ. Max. 0.1 0.1 2 1 1 Unit mA mA mA mA mA T c = 1 25 o C V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain 60 80 0.6 1.4 1.2 V V V V V fT Transition frequency ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 2N5191 / 2N5192 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 3/4 2N5191 / 2N5192 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4