2N5195_00

® 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package. It is inteded for use in medium power linear and switching applications. The complementary NPN type is 2N5192. 1 3 2 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 C o Value -80 -80 -5 -4 -7 -1 40 -65 to 150 150 Unit V V V A A A W o o Storage Temperature Max. Operating Junction Temperature C C December 2000 1/5 2N5195 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX I CEO I EBO Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (V BE = - 1.5V) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CB = r ated V CBO V CE = r ated V CEO V CE = r ated V CEO V CE = r ated V CEO V EB = -5 V I C = - 100 mA I C = - 1.5 A IC = -4 A I C = - 1.5 A I C = - 1.5 A IC = -4 A IC = -1 A I B = -0.15 A IB = - 1 A V CE = - 2 V V CE = - 2 V V CE = -2 V V CE = -10 V 20 7 2 -80 -0.6 -1.2 -1.2 80 MHz Min. Typ. Max. -0.1 -0.1 -2 -1 -1 Unit mA mA mA mA mA V V V V T c = 1 25 o C V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE ∗ h FE ∗ fT Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition frequency ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curves 2/5 2N5195 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/5 2N5195 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H 3 4.15 3.8 3.2 2.54 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 c1 0016114 4/5 2N5195 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5