2N5415

2N5415 2N5416 SILICON PNP TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot P tot T stg Tj Parameter 2N5415 Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Base Current Total Dissipation at T c ≤ 2 5 C o Value 2N5416 -350 -300 -6 -1 -0.5 10 1 -65 to 200 200 -200 -200 -4 Unit V V V A A W W o o Total Dissipation at T amb ≤ 5 0 o C Storage Temperature Max. Operating Junction Temperature C C June 1997 1/4 2N5415 / 2N5416 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO V CER ∗ Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Sustaining Voltage Test Conditions for 2 N5415 for 2 N5416 V CE = - 150 V for 2 N5415 for 2 N5416 I C = - 50 mA I C = - 10 mA for 2 N5415 for 2 N5416 I C = - 50 mA I C = - 50 mA I C = - 50 mA for 2 N5415 for 2 N5416 I C = - 5 mA I C = - 10 mA IE = 0 I B = - 5 mA V CE = - 10 V V CE = - 10 V 30 30 V CE = - 10 V V CE = - 10 V f = 1KHz f = 5MHz f = 1MHz 25 15 25 MHz pF 150 120 V EB = - 4 V V EB = - 6 V R BE = 50 Ω f or 2N5416 -350 V CB = - 175 V V CB = - 280 V Min. Typ. Max. -50 -50 -50 -20 -20 Unit µA µA µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain -200 -300 -2.5 -1.5 V V V V hfe fT C CBO Small Signal Current Gain Transition frequency Collector Base Capacitance V CB = - 10 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 2N5415 / 2N5416 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 2N5415 / 2N5416 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4