2N6036_00

® 2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIER s DESCRIPTION The 2N6036 and 2N6039 are complementary silicon power Darlington transistors mounted in Jedec SOT-32 plastic package. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 7 KΩ R2 Typ. = 230 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 2N6036 2N6039 80 80 5 4 8 0.1 40 -65 to 150 150 Unit V V V A A A W o C o C For PNP types voltage and current values are negative. December 2000 1/6 2N6036/2N6039 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 83.3 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CBO Parameter Collector Cut-off Current (V BE = - 1.5V) Test Conditions V CE = r ated V CEO V CE = r ated V CEO T c = 1 25 o C V CE = r ated V CBO V CE = r ated V CEO V EB = 5 V I C = 1 00 mA IC = 2 A IC = 4 A IC = 4 A IC IC IC IC = = = = IC = 2A 0 .5 A 2A 4A 0 .75 A IB = 8 mA I B = 4 0 mA I B = 4 0 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 1 0 V 80 2 3 4 2.8 500 750 100 f = 1KHz f = 1MHz 100 200 pF pF 25 15000 Min. Typ. Max. 0.1 0.5 0.1 0.1 2 Unit mA mA mA mA mA V V V V V Collector Cut-off Current (I E = 0 ) I CEO Collector Cut-off Current (I B = 0 ) I EBO Emitter Cut-off Current (I C = 0 ) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ Collector-Emitter Saturation Voltage V BE(sat) ∗ V BE ∗ h FE ∗ Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain hfe C CBO Small Signal Current Gain Collector Base Capacitance IE = 0 V CB = 1 0 V for N PN types for P NP types ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/6 2N6036/2N6039 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) Base Emitter Saturation Voltage (NPN type) Base Emitter Saturation Voltage (PNP type) 3/6 2N6036/2N6039 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN type) Freewheel Diode Forward Voltage (PNP type) 4/6 2N6036/2N6039 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H 3 4.15 3.8 3.2 2.54 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 c1 0016114 5/6 2N6036/2N6039 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6