2SD882_07

2SD882 NPN medium power transistor Features ■ ■ ■ High current Low saturation voltage Complement to 2SB772 Applications ■ ■ ■ ■ ■ Voltage regulation Relay driver Generic switch Audio power amplifier DC-DC converter Figure 1. SOT-32 (TO-126) 3 2 1 Description The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. Internal schematic diagram Table 1. Device summary Marking D882 Package SOT-32 Packing Tube Order code 2SD882 October 2007 Rev 3 1/8 www.st.com 8 Absolute maximum ratings 2SD882 1 Absolute maximum ratings Table 2. Symbol VCBO VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute maximum rating Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 60 30 5 3 6 1 2 12.5 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol Thermal data Parameter Value 10 Unit °C/W RthJ-case Thermal resistance junction-case max 2/8 2SD882 Electrical characteristics 2 Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 4. Symbol ICES ICEO IEBO V(BR)CEO (1) Electrical characteristics Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test conditions VCE = 60 V VCE = 30 V VEB = 5 V Min. Typ. Max. 10 100 10 Unit µA µA µA Collector-emitter breakdown voltage IC = 10 mA (IB = 0 ) IC = 100 µA 30 V Collector-base breakdown V(BR)CBO voltage (IE = 0 ) Emitter-base breakdown V(BR)EBO voltage (IC = 0 ) VCE(sat) (1) 60 V IE = 100 µA IC = 1 A IC = 2 A IC = 3 A IC = 2 A IC = 100 mA IC = 1 A IC = 3 A IC = 0.1 A IB = 50 mA IB = 100 mA IB = 150 mA IB = 100 mA VCE = 2 V VCE = 2 V VCE = 2 V VCE = 10 V 5 0.4 0.7 1.1 1.2 100 80 30 100 300 V V V V V Collector-emitter saturation voltage Base-emitter saturation voltage VBE(sat) (1) hFE fT DC current gain Transition frequency MHz 1. Pulsed duration = 300 ms, duty cycle ≤ 1.5%. 3/8 Electrical characteristics 2SD882 2.1 Figure 2. Typical characteristics (curves) Reverse biased safe operating area Figure 3. DC current gain Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage 4/8 2SD882 Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data 2SD882 SOT-32 (TO-126) mechanical data DIM. A B B1 D E e e1 L P Q Q1 H2 I 7 2 . 1 mm. MIN. 2.4 0.64 0.39 10.5 7.4 2.04 4.07 15.3 2.9 8 . 3 1 2.15 1.52 2.29 4.58 TYP MAX. 2.9 0.88 0.63 11.05 7.8 2.54 5.08 16 3.2 0016114E 6/8 2SD882 Revision history 4 Revision history Table 5. Date 09-Sep-2005 02-Oct-2007 Document revision history Revision 2 3 Changes Final datasheet. New template Updated mechanical data 7/8 2SD882 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8