2ST1480FP

2ST1480FP Low voltage NPN power transistor Features ■ High current gain characteristic ■ Fast switching speed ■ Fully insulated package Applications ■ Printer ■ DC-DC converter ) s ( ct du 3 o r P 1 2 TO-220FP e t e ol Description The device is manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. ) (s s b O Figure 1. Internal schematic diagrams t c u d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging 2ST1480FP 2ST1480FP TO-220FP Tube December 2009 Doc ID 16856 Rev 1 1/7 www.st.com 7 Absolute maximum ratings 1 2ST1480FP Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCBO Collector-base voltage (IE = 0) 80 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 5 A Collector peak current 10 Base current 1 PTOT Total dissipation at Tc ≤ 25 °C 25 TSTG Storage temperature IC ICM IB TJ P e Thermal data Symbol s b O Parameter RthJC t e l o Thermal resistance junction-case ___ _Max ) (s t c u d o r P e t e l o s b O Doc ID 16856 Rev 1 (s) A ct du ro Max. operating junction temperature Table 3. 2/7 Value A W -65 to 150 °C 150 °C Value Unit 5 °C/W 2ST1480FP 2 Electrical characteristics Electrical characteristics Tcase = 25 °C; unless otherwise specified. Electrical characteristics Table 4. Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCE = 80 V 0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 0.1 µA Collector-emitter breakdown IC = 10 mA voltage (IB = 0) V(BR)CEO(1) VCE(sat)(1) Collector-emitter saturation voltage IC = 3 A IB = 300 mA VBE(on)(1) Base-emitter on voltage IC = 3 A VCE = 5 V DC current gain IC = 0.5 A IC = 3 A VCE = 5 V VCE = 5 V Transition frequency IC = 50 mA_ hFE(1) fT Collector-base capacitance (IE = 0) CCBO Resistive load Turn-on time Turn-off time ton toff t c u ) (s s b O e t e ol VCB = 10 V ) s ( ct 80 V du o r P 170 1 V 1.5 V 290 50 VCE = 10 V 120 MHz f = 1 MHz 20 pF 60 ns 450 ns IC = 1.5 A, VCC = 10 V IB(on) = - IB(off) = 150 mA 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % d o r P e t e l o s b O Doc ID 16856 Rev 1 3/7 Package mechanical data 3 2ST1480FP Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 4/7 Doc ID 16856 Rev 1 2ST1480FP Package mechanical data Table 5. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 H 10 ) s ( ct du L2 16 L3 28.6 L4 9.8 L5 2.9 L6 15.9 L7 9 Figure 2. e t e l o r P 3 c u d 2.7 10.4 30.6 10.6 o s b 3.6 O ) 16.4 9.3 t(s Dia e t e l Max. 3.2 TO-220FP drawing o r P L7 E A B o s b D Dia O L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 16856 Rev 1 5/7 Revision history 4 2ST1480FP Revision history Table 6. Document revision history Date Revision 03-Dec-2009 1 Changes Initial release. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 6/7 Doc ID 16856 Rev 1 2ST1480FP ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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