2ST31A

2ST31A Low voltage NPN power transistor Features ■ High switching speed ■ Good performances in terms of hFE linearity TAB Application ■ Linear and switching industrial applications 3 Description 1 TO-220 The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high gain performance coupled with low saturation voltage. Figure 1. Table 1. 2 Internal schematic diagram Device summary Order code Marking Package Packaging 2ST31A 2ST31A TO-220 Tube December 2010 Doc ID 17868 Rev 2 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 60 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 3 A Collector peak current 5 A Base current 1 A PTOT Total dissipation at Tcase = 25°C 40 W TSTG Storage temperature -65 to 150 °C 150 °C IC ICM IB TJ Table 3. Symbol RthJC 2/8 2ST31A Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case max. Doc ID 17868 Rev 2 Value Unit 3.1 °C/W 2ST31A 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit 0.3 mA 1 mA 0.2 mA ICEO Collector cut-off current (IB = 0) IEBO Emitter cut-off current (IC = 0) VEB = 5 V ICES Collector cut-off current (VBE = 0) VCE = 60 V VCEO(sus)(1) Collector-emitter sustaining voltage (IB = 0) IC = 30 mA VCE(sat)(1) Collector-emitter saturation voltage IC = 3 A_ IB = 375 mA 1.2 V VBE(sat)(1) Base-emitter saturation voltage IC = 3 A__ IB = 375 mA 1.45 V DC current gain IC = 20 mA__ VCE = 4 V IC = 1 A _ _ VCE = 4V hFE(1) VCE = 30 V 60 100 25 V 150 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Doc ID 17868 Rev 2 3/8 Electrical characteristics 2.1 2ST31A Electrical characteristics (curve) Figure 2. Safe operating area Figure 3. Derating curves Figure 4. DC-current gain Figure 5. Base-emitter saturation voltage VBE(sat) (V) hFE hFE= 10 TJ= 25°C TJ= -40°C TJ= -40°C 100 1 TJ= 150°C TJ= 25°C TJ= 150°C VCE = 4 V 10 0.01 Figure 6. 0.1 1 IC (A) Collector-emitter saturation voltage VCE(sat) (V) V) hFE= 10 TJ= 150°C 0.1 TJ= 25°C TJ= -40°C 0.01 0.01 4/8 0.1 1 Ic(A) Doc ID 17868 Rev 2 0.1 0.01 0.1 1 Ic(A) 2ST31A 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 17868 Rev 2 5/8 Package mechanical data 2ST31A TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 6/8 Doc ID 17868 Rev 2 2ST31A 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 24-Aug-2010 1 Initial release. 14-Dec-2010 2 Document status promoted from preliminary data to datasheet. Doc ID 17868 Rev 2 7/8 2ST31A Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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