2ST501T

2ST501T HIGH VOLTAGE NPN POWER TRANSISTOR n n n n HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATION JUNCTION TEMPERATURE HIGH DC CURRENT GAIN Figure 1: Package APPLICATIONS n DRIVER FOR SOLENOID, RELAY AND MOTOR DESCRIPTION The 2ST501T is a High Voltage NPN silicon transistor in monolithic special Darlington configuration mounted in Jedec TO-220 plastic package. 3 1 2 TO-220 Figure 2: Internal Schematic Diagram Table 1: Order Codes Part Number Marking Package Packaging 2ST501T 2ST501T TO-220 TUBE Table 2: Absolute Maximum Ratings Symbol VCES Parameter VCEO Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC ICM Value Unit 500 V 350 V 5 V Collector Current 4 A Collector Peak Current (tp < 5ms) 8 A Base Current 0.5 A IBM Base Peak Current (tp < 5ms) 2.5 A Ptot Total Dissipation at TC = 25 oC 100 W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C IB February 2005 Rev. 1 1/6 2ST501T Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max 1.25 o C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES Parameter Test Conditions Collector Cut-off Current VCE = 500 V (IE = 0) V = 500 V CE ICEO Collector Cut-off Current VCE = 350 V (IB = 0) V = 350 V CE IEBO Emitter Cut-off Current Min. Typ. Tcase = 125 oC Tcase = 125 oC VEB = 5 V Max. Unit 100 mA 500 mA 100 mA 500 mA 10 mA (IC = 0) VCEO(sus)* Collector-Emitter Sustaining Voltage IC = 10 mA L = 10 mH 350 V (IB = 0 ) VCE(sat)* Collector-Emitter IC = 2 A Saturation Voltage Base-Emitter Saturation IC = 2 A Voltage DC Current Gain IC = 2 A VCE = 2 V INDUCTIVE LOAD VCC = 12 V Vclamp = 250 V ts Storage Time L = 4 mH IC = 2 A 15 ms tf Fall Time VBE = -3 V 1.5 ms VBE(sat)* hFE IB = 20 mA * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. 2/6 IB = 2 mA 1.5 V IB = 2 mA 2 V 2000 2ST501T Figure 3: DC Current Gain Figure 5: DC Current Gain Figure 4: Collector-Source On Voltage Figure 6: Base-Source On Voltage 3/6 2ST501T TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 4/6 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 2ST501T Table 5: Revision History Version Release Date 25-Feb-2005 1 Change Designator First Release. 5/6 2ST501T Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6