2STC4467

2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC ) s ( ct u d o 3 Applications ■ e t e ol Audio power amplifier Description s b O Figure 1. The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. ) (s Pr 2 1 TO-3P Internal schematic diagram t c u d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8 2STC4467 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCBO Collector-base voltage (IE = 0) 120 V VCEO Collector-emitter voltage (IB = 0) 120 V VEBO Emitter-base voltage (IC = 0) 6 V Collector current 8 A Collector peak current (tP < 5 ms) 16 A PTOT Total dissipation at Tc = 25 °C 80 Tstg Storage temperature IC ICM TJ Rthj-case ete Parameter Thermal resistance junction-case t c u d o r P e t e l o ol ______________ __max ) (s s b O 150 Thermal data Symbol ) s ( t c u d -65 to 150 Max. operating junction temperature Table 3. 2/8 Value s b O o r P W °C °C Value Unit 1.563 °C/W 2STC4467 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 120 V 10 µA IEBO Emitter cut-off current (IC = 0) VEB = 6 V 10 µA Collector-emitter breakdown V(BR)CEO(1) voltage (I = 0) B V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 50 mA 120 IC = 100 µA 120 Emitter-base breakdown voltage IE = 1 mA V(BR)EBO(1) (I = 0) C VCE(sat) (1) hFE fT Collector-emitter saturation voltage IC = 3 A DC current gain IC = 3 A Transition frequency IC = 0.5 A 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5% O ) bs V CE = 12 V u d o V 1.5 70 140 t e l o V CE = 4 V V r P e 6 IB = 300 mA ) s ( ct 20 V V MHz s ( t c u d o r P e t e l o s b O 3/8 2STC4467 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve ) s ( ct Figure 4. Output characteristics Figure 5. u d o r P e DC current gain t e l o ) (s s b O t c u Figure 6. P e Collector-emitter saturation voltage Figure 7. t e l o s b O 4/8 d o r Collector current vs base-emitter voltage 2STC4467 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and products status are available at: www.st.com. ECOPACK® is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 5/8 2STC4467 Package mechanical data TO-3P Mechanical data DIM. mm. TYP MIN. 4.6 1.45 1.20 0.80 1.80 2.80 0.55 19.70 A A1 A2 b b1 b2 c D D1 E E1 E2 e L L1 L2 P Q Q1 1.50 1.40 1 0.60 19.90 13.90 15.80 13.60 9.60 5.45 20 3.50 18.40 5.15 19.50 18.20 3.10 t c u d o r P e s b O 6/8 r P e t e l o s b O 5 3.80 ) s ( ct u d o 15.40 ) (s t e l o MAX. 5 1.65 1.60 1.20 2.20 3.20 0.75 20.10 5.75 20.50 18.60 3.30 2STC4467 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 22-Nov-2007 1 Initial release 30-Apr-2008 2 Document status promoted from preliminary data to datasheet. 11-Feb-2009 3 Added Section 2.1: Electrical characteristics (curves) ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 7/8 2STC4467 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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