2STF1525
Low voltage high performance NPN power transistor
Features
■
Very low collector-emitter saturation voltage
■
High current gain characteristic
■
Fast switching speed
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Applications
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■
Emergency lighting
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LED drive
■
Motherboard and hard disk drive
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Mobile equipment
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DC-DC converter, voltage regulation
SOT-89
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Description
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Figure 1.
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The device is a NPN transistor manufactured
using new “PB-HCD” (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Internal schematic diagram
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Table 1.
Device summary
Order codes
Marking
Package
Packaging
2STF1525
1525
SOT-89
Tape and reel
November 2009
Doc ID 15794 Rev 2
1/7
www.st.com
7
Electrical ratings
1
2STF1525
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Unit
VCEX
Collector-emitter voltage (VBE = - 1.5 V)
95
V
VCEO
Collector-emitter voltage (IB = 0)
25
V
VEBO
Emitter-base voltage (IC = 0)
5
V
Collector current
5
A
Collector peak current (tP < 5 ms)
10
A
Base current
1
IC
ICM
IB
PTOT
Total dissipation at Tamb = 25 °C
TSTG
Storage temperature
Table 3.
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Thermal data
Symbol
RthJA(1)
Parameter
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Thermal resistance junction-ambient __max
1. Device mounted on PCB area of 1 cm2
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Doc ID 15794 Rev 2
Pr
A
1.4
W
-65 to 150
°C
150
°C
Value
Unit
89
°C/W
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Max. operating junction temperature
TJ
2/7
Value
2STF1525
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Max.
Unit
Collector cut-off current
(IE = 0)
VCB = 50 V
0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 4 V
0.1
µA
Collector-emitter
breakdown voltage
(VBE = -1.5 V)
IC = 1 mA
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
V(BR)EBO
hFE (1)
IE = 100 µA
DC current gain
IC = 0.5 A
IC = 3 A
IC = 5 A
ton
toff
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VCE = 2 V
VCE = 2 V
VCE = 5 V
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V
5
V
150
100
500
150
220
500
mV
mV
1.2
V
IC = 3 A
IC = 3.5 A
IB = 300 mA
IB = 40 mA
Base-emitter saturation
voltage
IC = 3 A
IB = 300 mA
Collector-base
capacitance (IE = 0)
VCB = 10 V, f = 1 MHz
20
pF
Transition frequency
VCE = 10 V
120
MHz
Resistive load
Turn-on time
Turn-off time
IC = 1.5 A
VCC = 10 V
IB1 = -IB2 = 150 mA
60
450
ns
ns
VBE(sat) (1)
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Pr
25
bs
(s)
Collector-emitter
saturation voltage
fT
95
IC = 10 mA
Emitter-base breakdown
voltage (IC = 0)
VCE(sat) (1)
CCBO
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Typ.
ICBO
V(BR)CEX
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Min.
IC = 50 mA
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Doc ID 15794 Rev 2
3/7
Package mechanical data
3
2STF1525
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Doc ID 15794 Rev 2
2STF1525
Package mechanical data
SOT-89 mechanical data
mm
Dim.
Min.
A
Typ.
Max.
1.40
1.60
B
0.44
0.56
B1
0.36
0.48
C
0.35
0.44
C1
0.35
0.44
D
4.40
D1
1.62
E
2.29
e
1.42
e1
2.92
H
3.94
K
1°
L
0.89
R
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4.60
1.83
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Pr
2.60
1.57
3.07
4.25
8°
1.20
0.25
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7098166_C
Doc ID 15794 Rev 2
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Revision history
4
2STF1525
Revision history
Table 5.
Document revision history
Date
Revision
Changes
04-Jun-2009
1
Initial release.
12-Nov-2009
2
Document status promoted from preliminary data to datasheet.
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Doc ID 15794 Rev 2
2STF1525
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Please Read Carefully:
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
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Information in this document supersedes and replaces all information previously supplied.
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